Sverdlov viktor (15 Ergebnisse)

Zustand: New. In English.

Zustand: New. In English.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: Used. pp. 268 101 Illus.

Zustand: new. Pages: 336 Language: Russian. V antologiju voshli rasskazy trinadtsati russkikh pisatelej vtoroj poloviny XX stoletija, gde deti ne prosto vystupajut v kachestve personazhej, a vosprinimajut mir osobym obrazom, ne pokhozhim na videnie okruzhajuschej dejstvitelnosti vzroslymi gerojami. Sledom za rasskazami, soderzhaschimi zagadku rebjonka, pomescheny ikh interpretatsii. Avtory pojasnenij pytajutsja najti razgadku ili, po krajnej mere, nametit puti k ejo nakhozhdeniju. Jurij Kazakov. Vo sne ty gorko plakal Ljudmila Ulitskaja. Perlovyj sup Jurij Koval. Vystrel Tatjana Tolstaja. Svidanie s ptitsej Viktor Dragunskij. Pojut koljosa - tra-ta-ta Viktor Goljavkin. Premija Fridrikh Gorenshtejn. Dom s bashenkoj Andrej Bitov. No-ga Fazil Iskander. Mucheniki stseny Vasilij Aksjonov. Zavtraki sorok tretego goda Jurij Nagibin. Zimnij dub Valentin Rasputin. Uroki frantsuzskogo Ljudmila Petrushevskaja. Novye Robinzony 9785171629670. …

Zustand: Used. pp. 268.

Zustand: New.

Zustand: New.

Zustand: New. In English.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.…

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.…

Taschenbuch. Zustand: Neu. Strain-Induced Effects in Advanced MOSFETs | Viktor Sverdlov | Taschenbuch | Computational Microelectronics | xiv | Englisch | 2016 | Springer | EAN 9783709119334 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Zustand: New. In English.

Paperback. Zustand: Brand New. reprint edition. 252 pages. 9.45x6.61x0.61 inches. In Stock.

Hardcover. Zustand: Brand New. 266 pages. 9.69x6.77x0.71 inches. In Stock.