Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - Softcover

Buch 3 von 17: Computational Microelectronics

Sverdlov, Viktor

 
9783709119334: Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics)
Softcover
ISBN 10: 3709119332 ISBN 13: 9783709119334
Verlag: Springer, 2016

Inhaltsangabe

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Von der hinteren Coverseite

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Verlag
Springer
Erscheinungsdatum
2016
Sprache
Englisch
ISBN 10 
3709119332
ISBN 13 
9783709119334
Einband
Taschenbuch
Anzahl der Seiten
268
Kontakt zum Hersteller
ProductSafety@springernature.com
ProductSafety@springernature.com

Poststr. 9
Darmstadt
64293
Deutschland

Weitere beliebte Ausgaben desselben Titels

9783709103814: Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics)

Vorgestellte Ausgabe

ISBN 10:  3709103819 ISBN 13:  9783709103814
Verlag: Springer, 2010
Hardcover