materials processes reliability advanced (9 Ergebnisse)

hardcover. Zustand: Very Good. Zustand des Schutzumschlags: No Dust Jacket. First Edition. Small black mark at the bottom page corner. Used.

25 cm. original hardcover. x,310 pp. ills, diagrams, tables. references. index. "Materials science monographs, 29". -(libr label, library stamp, slightly rubbed, owner's name, otherwise (very) good). 777g.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. pp. ix + 127 Illus.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Enabled by the development and introduction of new materials, the semiconductor industry continues to follow Moore's law into 32nm and 22nm technologies. Advanced interconnect structures require the use of porous dielectrics with further reduced k-values and even weaker mechanical properties, as well as much thinner metallization liners. In addition, the increasing resistivity of Cu at decreasing dimensions must be addressed in order to maintain the performance of continuously shrinking devices. To deal with these issues, and to maintain the reliability of the interconnects, innovations in materials, processes and architectures are needed. This book brings together researchers from around the world to exchange the latest advances in materials, processes, integration and reliability in advanced interconnects and packaging, and to discuss interconnects for emerging technologies. Papers from a joint session with Symposium F, Packaging, Chip-Package Interactions and Solder Materials Challenges, are also included and focus on 3D chip stacking and molecular electronics.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.

Zustand: Gut. Zustand: Gut | Seiten: 320 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Hardcover. Zustand: Brand New. 189 pages. 9.00x6.25x0.75 inches. In Stock.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Enabled by the development and introduction of new materials, the semiconductor industry continues to follow Moore's law into 32nm and 22nm technologies. Advanced interconnect structures require the use of porous dielectrics with further reduced k-values and even weaker mechanical properties, as well as much thinner metallization liners. In addition, the increasing resistivity of Cu at decreasing dimensions must be addressed in order to maintain the performance of continuously shrinking devices. To deal with these issues, and to maintain the reliability of the interconnects, innovations in materials, processes and architectures are needed. This book brings together researchers from around the world to exchange the latest advances in materials, processes, integration and reliability in advanced interconnects and packaging, and to discuss interconnects for emerging technologies. Papers from a joint session with Symposium F, Packaging, Chip-Package Interactions and Solder Materials Challenges, are also included and focus on 3D chip stacking and molecular electronics.