Computational microelectronics (104 Ergebnisse)

Hardcover. Zustand: Fair. Verschmutzung / Wasserschaden; Abnutzung / Risse - leicht; Gebrochener Buchrücken / Seiten oder Softcover umgeknickt. Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.…

Hardcover. Zustand: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

Hard Cover. Zustand: Good. No Jacket. Hard cover. Usual ex-library features. The interior is clean and tight. Binding is good. Cover shows slight wear. Library label taped on front. 193 pages. Ex-Library.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

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Zustand: Good. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

gebundene Ausgabe. Zustand: Gut. 351 Seiten Der Erhaltungszustand des hier angebotenen Werks ist trotz seiner Bibliotheksnutzung sauber. Es befindet sich neben dem Rückenschild lediglich ein Bibliotheksstempel im Buch; ordnungsgemäß entwidmet. Buchblock vorne leicht gebrochen, aber weiter stabil. In ENGLISCHER Sprache. Sprache: Englisch Gewicht in Gramm: 760.…

Paperback. Zustand: Brand New. 240 pages. 9.61x6.69x0.55 inches. In Stock.

Paperback. Zustand: Brand New. 288 pages. 9.61x6.69x0.65 inches. In Stock.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva tion of interface or boundary conditions for semiconductor device simula tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand ing of the basic semiconductor equations, while the boundary conditions for these equations received very much less attention. Until today on many occasions one could get the impression that boundary conditions are unimportant accessories; they do not stand on their own besides the bulk transport equations, although it is clear that they are of course a necessary complement of these.…

Paperback. Zustand: Brand New. 324 pages. 9.61x6.69x0.68 inches. In Stock.

Paperback. Zustand: Brand New. 332 pages. 9.61x6.69x0.75 inches. In Stock.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs). Unlike IC devices, however, microtransducers must interact with their environment, so their numerical simulation is considerably more complex. While the design of ICs aims at suppressing 'parasitic' effects, microtransducers thrive on optimizing the one or the other such effect. The challenging quest for physical models and simulation tools enabling microtransducer CAD is the topic of this book. The book is intended as a text for graduate students in Electrical Engineering and Physics and as a reference for CAD engineers in the microsystems industry.…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - As the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a 'virtual fab' S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with 'robust', 'proven' tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.…

Zustand: Used. pp. 427.

Paperback. Zustand: Brand New. 456 pages. 9.25x6.10x1.03 inches. In Stock.

Zustand: New. In.

Zustand: New.

Zustand: New.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

gebundene Ausgabe. Zustand: Gut. 289 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); Schnitt und Einband sind etwas staubschmutzig; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Text in ENGLISCHER Sprache! Sprache: Englisch Gewicht in Gramm: 700.…

Hardcover. Zustand: Good. Good condition item with wear and markings, ex-library.

Zustand: Used. pp. 427.

hardcover. Zustand: Gut. 309 Seiten; 9783211405376.3 Gewicht in Gramm: 3.

Zustand: New. In.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.…