9780412146015 - analysis and design of mosfets: modeling, simulation, and parameter extraction (software engineering; 4) von juin jei liou; ortiz-conde, adelmo; garcia-sanchez, francisco (7 Ergebnisse)
- Hardcover
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Zustand: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect…transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
- Hardcover
Anbieter: Buchpark, Trebbin, DeutschlandBuchpark
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Zustand: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect…transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
Juin Jei Liou; Ortiz-Conde, Adelmo; Garcia-Sanchez, Francisco
- Hardcover
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes KönigreichRia Christie Collections
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EUR 166,50
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Zustand: New. In.
- Hardcover
Anbieter: Majestic Books, Hounslow, Vereinigtes KönigreichMajestic Books
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EUR 192,41
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Zustand: New. pp. 372 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
- Hardcover
Anbieter: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, DeutschlandBUCHSERVICE / ANTIQUARIAT Lars Lutzer
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EUR 189,90
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Hardcover. Zustand: gut. 1998. Analysis and Design of MOSFETs In englischer Sprache. pages.
- Hardcover
Anbieter: AHA-BUCH GmbH, Einbeck, DeutschlandAHA-BUCH GmbH
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EUR 168,73
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Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor…(MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Analysis and Design of MOSFETs
Liou, J.J.; Ortiz-Conde, Adelmo (Electronics Engineering Dept., University of Simon Bolivar, Caracas, Venezuela); Garcia-Sanchez, Francisco (Electron
- Hardcover
Anbieter: Kennys Bookstore, Olney, MD, USAKennys Bookstore
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EUR 258,20
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Zustand: New. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Profes…sional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540. . 1998. Hardback. . . . . Books ship from the US and Ireland.
