Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
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Anbieter: Buchpark, Trebbin, Deutschland
Zustand: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. Artikel-Nr. 1506339/203
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Anbieter: Buchpark, Trebbin, Deutschland
Zustand: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. Artikel-Nr. 1506339/3
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Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Zustand: New. In. Artikel-Nr. ria9780412146015_new
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Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Zustand: New. pp. 372 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam. Artikel-Nr. 5849628
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Anbieter: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, Deutschland
Hardcover. Zustand: gut. 1998. Analysis and Design of MOSFETs In englischer Sprache. pages. Artikel-Nr. BN191587
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Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. Artikel-Nr. 9780412146015
Anzahl: 1 verfügbar
Anbieter: Kennys Bookstore, Olney, MD, USA
Zustand: New. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540. . 1998. Hardback. . . . . Books ship from the US and Ireland. Artikel-Nr. V9780412146015
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