Sprache: Englisch
Verlag: Materials Research Society, 2002
ISBN 10: 1558996249 ISBN 13: 9781558996243
Anbieter: Zubal-Books, Since 1961, Cleveland, OH, USA
Zustand: Very Good. 424 pp., hardcover, bound upside down, minor imperfections to binding, else fine. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.
Sprache: Englisch
Verlag: Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 35,25
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In den WarenkorbZustand: New. In.
Sprache: Englisch
Verlag: Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
Anbieter: Kennys Bookstore, Olney, MD, USA
Zustand: New.
Anbieter: SpringBooks, Berlin, Deutschland
Hardcover. Zustand: As New. like new.
Sprache: Englisch
Verlag: Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.
EUR 114,22
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In den WarenkorbZustand: New. In.
Sprache: Englisch
Verlag: Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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In den WarenkorbZustand: New. In.
Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 288 | Sprache: Englisch | Produktart: Bücher | This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers¿ understanding of future trends in non-volatile memories.
EUR 92,27
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In den WarenkorbZustand: New.
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In den WarenkorbGebunden. Zustand: New.
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In den WarenkorbZustand: New.
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In den WarenkorbHardcover. Zustand: Brand New. 2014 edition. 273 pages. 9.20x5.00x0.50 inches. In Stock.
Taschenbuch. Zustand: Neu. Emerging Non-Volatile Memories | Seungbum Hong (u. a.) | Taschenbuch | xii | Englisch | 2016 | Humana | EAN 9781489979308 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
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In den WarenkorbHardcover. Zustand: Brand New. 221 pages. 9.00x6.00x0.56 inches. In Stock.
Sprache: Englisch
Verlag: Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Anbieter: Kennys Bookstore, Olney, MD, USA
EUR 169,48
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In den WarenkorbZustand: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Auciello, Orlando; Hong, Seungbum (Samsung Advanced Institute of Technology, Suwon, Korea); Soss, Steven; Wouters, Dirk. Series: MRS Proceedings. Num Pages: 221 pages, illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 18. Weight in Grams: 432. . 2008. 1st Edition. hardcover. . . . . Books ship from the US and Ireland.
Sprache: Englisch
Verlag: Springer US, Springer New York, 2014
ISBN 10: 1489975365 ISBN 13: 9781489975362
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers' understanding of future trends in non-volatile memories.
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers' understanding of future trends in non-volatile memories.
EUR 177,95
Anzahl: 1 verfügbar
In den WarenkorbPaperback. Zustand: Brand New. reprint edition. 285 pages. 9.25x6.10x0.68 inches. In Stock.
Sprache: Englisch
Verlag: Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.