Sprache: Englisch
Verlag: Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 35,64
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In den WarenkorbZustand: New. In.
Sprache: Englisch
Verlag: Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
Anbieter: Kennys Bookstore, Olney, MD, USA
Zustand: New.
Sprache: Englisch
Verlag: Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.
Sprache: Englisch
Verlag: Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 120,44
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In den WarenkorbZustand: New. In.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 163,35
Anzahl: 2 verfügbar
In den WarenkorbHardcover. Zustand: Brand New. 221 pages. 9.00x6.00x0.56 inches. In Stock.
Sprache: Englisch
Verlag: Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Anbieter: Kennys Bookstore, Olney, MD, USA
EUR 172,62
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Auciello, Orlando; Hong, Seungbum (Samsung Advanced Institute of Technology, Suwon, Korea); Soss, Steven; Wouters, Dirk. Series: MRS Proceedings. Num Pages: 221 pages, illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 18. Weight in Grams: 432. . 2008. 1st Edition. hardcover. . . . . Books ship from the US and Ireland.
Sprache: Englisch
Verlag: Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.