valov (16 Ergebnisse)

Zustand: Good. 93 pp., paperback, ex library, else text clean & binding tight. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.

4°, OLn. mit OSU, 191 S. mit zahlr. Abb., SU gering randrissig, gutes, sauberes Expl. ru Gewicht in Gramm: 850.

Hardcover. Zustand: Good. Some external wear, mot evident at corners. All plates in very good condition. Text in Russian & English.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 392 | Sprache: Englisch | Produktart: Bücher | This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers¿ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Taschenbuch. Zustand: Neu. Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations | Jennifer Rupp (u. a.) | Taschenbuch | vi | Englisch | 2022 | Springer International Publishing | EAN 9783030424268 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Zustand: New.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods,tuning thin film microstructures, and material/device characterization and modeling.A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Taschenbuch. Zustand: Neu. Metal Oxides for Non-volatile Memory | Materials, Technology and Applications | Panagiotis Dimitrakis (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2022 | Elsevier | EAN 9780128146293 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Zustand: New. In.

Kartoniert / Broschiert. Zustand: New. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, incl.

Hardcover. Zustand: Brand New. 2nd edition. 762 pages. German language. 9.44x6.61x1.89 inches. In Stock.

Zustand: New. Mit Glossar zu Fachbegriffen, einem zwoelfsprachigen Woerterbuch der Termini fuer internationale ProjekteAnforderungen der europaeischen und deutschen Netzkodizes Grundlagen zur Netzintegration erneuerbarer EnergienBoris Valov.

Buch. Zustand: Neu. Neuware.

Buch. Zustand: Neu. Handbuch Netzintegration Erneuerbarer Energien | Netzanschluss, Stromerzeugungsanlagen und Regelung | Boris Valov | Buch | XXIX | Deutsch | 2023 | Springer VS | EAN 9783658377908 | Verantwortliche Person für die EU: Springer Vieweg in Springer Science + Business Media, Abraham-Lincoln-Str. 46, 65189 Wiesbaden, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Buch. Zustand: Neu. Neuware 764 pp. Deutsch.