This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14 th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14 th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Zustand: New. pp. 556 Illus. Artikel-Nr. 5670119
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Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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Anbieter: moluna, Greven, Deutschland
Zustand: New. Epitaxy: Wide Band-Gap Nitrides.- Structural properties of GaN quantum dots.- Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes.- Investigation of InxGa1?x N islands with electron microscopy.- First stage of nucleation of GaN on (0001. Artikel-Nr. 4887627
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Buch. Zustand: Neu. Neuware - Epitaxy: Wide Band-Gap Nitrides.- Epitaxy: Silicon-Germanium Alloys.- Epitaxy: Growth and Defect Phenomena.- High Resolution Microscopy and Nanoanalysis.- Self-Organised and Quantum Domain Structures.- Processed Silicon and Other Device Materials.- Device Studies.- Scanning Electron and Scanning Probe Advances. Artikel-Nr. 9783540319146
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