optoelectronic devices properties (21 Ergebnisse)

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Taschenbuch. Zustand: Neu. Properties of Magnesium doped Antimony Sulphide Thin Films | Applications of Chemically Deposited Magnesium doped Antimony Sulphide Thin Films in Optoelectronic Devices | Samuel Ugochukwu Ele (u. a.) | Taschenbuch | 84 S. | Englisch | 2019 | LAP LAMBERT Academic Publishing | EAN 9786200234162 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book focuses on organic semiconductors with particular attention paid to their use as photovoltaic devices. It addresses a fundamental and hitherto overlooked concept in the field of organic optoelectronics, namely the role that sub-gap states play in the performance of organic semiconducting devices. From a technological point of view, organic semiconductor-based devices are of significant interest due to their lightweight, ease of processability, conformal flexibility, and potentially low cost and low embodied energy production. Motivated by these rather unique selling points, the performance of organic semiconductors has been a subject of multidisciplinary study for more than 60 years with steady progress in applications such as solar cells, transistors, light emitting diodes, and various sensors.The book begins with a review of the main electro-optical phenomena in organic solar cells and presents a new method for measuring exciton diffusion lengths based on a low-quencher-content device structure. Furthermore, the book reveals how mid-gap trap states are a universal feature in organic semiconductor donor-acceptor blends, unexpectedly contributing to charge generation and recombination, and having profound impact on the thermodynamic limit of organic photovoltaic devices. Featuring cutting-edge experimental observations supported with robust and novel theoretical arguments, this book delivers important new insight as to the underlying dynamics of exciton generation and diffusion, charge transfer state dissociation, and indeed the ultimate fate of photogenerated free carriers.

Taschenbuch. Zustand: Neu. CADMIUM SULFIDE NANOSTRUCTURES FOR DEVICE APPLICATIONS | CADMIUM SULFIDE BASED NANOSTRUCTURES: SYNTHESIS, OPTICAL PROPERTIES, APPLICATION IN ELECTRONIC AND OPTOELECTRONIC DEVICES | Suvra Prakash Mondal (u. a.) | Taschenbuch | 144 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783843359498 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Optoelectronic Properties of Organic Semiconductors | Charge Generation and Recombination in Next-Generation Photovoltaic Devices | Nasim Zarrabi | Taschenbuch | SpringerBriefs in Materials | xv | Englisch | 2022 | Springer | EAN 9783030931612 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

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Taschenbuch. Zustand: Neu. Rare-Earth Implanted MOS Devices for Silicon Photonics | Microstructural, Electrical and Optoelectronic Properties | Lars Rebohle (u. a.) | Taschenbuch | Springer Series in Materials Science | xviii | Englisch | 2012 | Springer | EAN 9783642265587 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Wo Licht ist, ist auch Schatten! (¿More light, more shadow!¿ or simpler: ¿Nothing is perfect¿) ¿Johann Wolfgang von Goethe, from Got ¿ z von Berlichingen, Act I There exist already about ten books (e. g. [1¿8]) ¿ not counting the many conf- enceproceedingsvolumes¿ onthe differentaspectsofSi-basedphotonicsincluding also the issue of silicon-basedlight emission. Why is now anotherone neededabout this subject, and even more, exclusively about a special type of light emitters? This book summarizes all aspects of the development of rare earth (RE) c- taining MOS devices fabricated by ion implantation as the key technology and critically re ects the related referencesthroughoutthe different chapters. This work was mainly done in the course of the last 10 years. Preliminary work for this goal, undertaken mostly in the nineties, was based on the introduction of group IV e- ments (Si, Ge, Sn) into the thermally grown silicon dioxide leading to the highest power ef ciency values in the blue¿violet wavelength range. This success inspired us to use the REs as means of exploring other wavelength ranges with the same or even higher power ef ciencies. After an historical introduction of the REs and silicon-based light emission, Chap. 1 presents a review of electroluminescence from MOS-type light emitters, based on silicon and its technology. The achievement of an optimized material for electrically driven light emission, that is, ef cient emission with reasonable reliability, is only possible with a deep knowledge of the materials properties det- miningtheelectro-optical(orphotonic)properties(seeChap. 2).

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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.

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Hardcover. Zustand: Brand New. 2nd edition. 950 pages. 9.00x6.00x1.85 inches. In Stock.