Molecular beam epitaxy (85 Ergebnisse)

Hardcover. Zustand: Fair. No Jacket. Readable copy. Pages may have considerable notes/highlighting. ~ ThriftBooks: Read More, Spend Less.

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Zustand: Good. Volume 7. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings. In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,800grams, ISBN:3540190759.…

gebundene Ausgabe. Zustand: Gut. 382 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); Schnitt und Einband sind etwas staubschmutzig; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Text in ENGLISCHER Sprache! Sprache: Englisch Gewicht in Gramm: 720.…

Paperback. Zustand: Very Good. 1. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

Paperback. Zustand: Brand New. 180 pages. 10.25x7.25x0.41 inches. In Stock.

Hardcover. Zustand: Gut. xiv, 428 S. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library in GOOD condition with library-signature and stamp(s). Some traces of use. R-16629 354056540X Sprache: Englisch Gewicht in Gramm: 550.

Taschenbuch. Zustand: Neu. Neuware - Aluminum gallium nitride (AlGaN)-based devices are attractive candidates for integration into future Air Force communication and sensor platforms, including those that must operate in harsh radiation environments. In this study, the electrical and optical properties of 1.0 MeV electron irradiated n-AlxGa1-xN are characterized for aluminum mole fraction x = 0.0 to 0.3 using deep level transient spectroscopy (DLTS), temperature-dependent Hall, and cathodoluminescence (CL) measurements. Following irradiation of the AlGaN, it is found that four different electron traps are created, having energy levels within 0.4 eV below the conduction band edge. Three of these traps correspond to radiation-induced traps previously reported in GaN, and they are found to deepen significantly in the energy band gap with increase in aluminum mole fraction. The room temperature carrier concentration decreases following irradiation, and the carrier removal rate is found to depend foremost on the initial carrier concentration, regardless of the aluminum mole fraction. Also, following 1.0 MeV electron irradiation at a fluence of 1x1017 cm-2, the peak CL intensities of the samples are reduced, on average, by 50%. In spite of these findings, it is concluded that n-AlxGa1-xN is intrinsically more tolerant to radiation than conventional semiconductor materials such as GaAs and Si.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.…

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Hardcover. XII, 382 p. Acceptable condition. Minor signs of storage and use. Retired library copy with corresponding labelling. Book with water damage, book pages wavy. Spine with tear. 9783540190752 Sprache: Englisch Gewicht in Gramm: 1000.

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Zustand: Good. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: Good. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Hardcover. XII, 382 p. Good condition. The reading pages are clean and unmarked. Slight signs of storage and use. Retired library copy with corresponding labelling. Book pages slightly wavy. Otherwise a good copy. 9783540190752 Sprache: Englisch Gewicht in Gramm: 1000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. KlappentextrnrnAluminum gallium nitride (AlGaN)-based devices are attractive candidates for integration into future Air Force communication and sensor platforms, including those that must operate in harsh radiation environments. In this study, t.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.…

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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Master's Thesis from the year 2012 in the subject Materials Science, University of California, Berkeley , language: English, abstract: The application of graphene for large-area electronics requires controllable growth of single crystalline quasi-freestanding graphene films. Controllable growth of graphene films on gold foils at various temperatures using molecular beam epitaxy is shown. Film quality and electrical characteristics probed using Hall measurement, Raman spectroscopy, and Rutherford backscattering spectrometry are shown to improve at lower temperature possibly peaking at ~825 C. Further experiments are required to assess a stronger correlation between growth parameters and film characteristics. In particular, varying carbon flux and increasing the number of growths are discussed.…

Taschenbuch. Zustand: Neu. InGaN solar cells | Molecular beam epitaxy & metalorganic vapour phase epitaxy approaches - from growth to device | Sirona Valdueza-Felip | Taschenbuch | 120 S. | Englisch | 2017 | Éditions universitaires européennes | EAN 9783639548723 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

Paperback. Zustand: Brand New. 732 pages. 9.25x6.10x1.65 inches. In Stock.

Paperback. Zustand: Brand New. 378 pages. 10.51x7.68x0.86 inches. In Stock.

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Zustand: New. KlappentextrnrnAlGaN and GaN have gained attention in the last few years for their applications in the blue and ultraviolet (UV) wavelength range. However, the majority of the attention has been directed to studying GaN rather than AlGaN. AlGaN .

Taschenbuch. Zustand: Neu. Flux Profile Modeling using Monte Carlo Simulation | A simulation tool for deposition processess using Molecular Beam Epitaxy | Ramprasad Vijayagopal (u. a.) | Taschenbuch | 104 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838369389 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.…

Taschenbuch. Zustand: Neu. A Kinetic Monte Carlo Simulation of Submonolayer Crystal Growth | Influence of Small-Cluster Mobility in Submonolayer Growth during Molecular Beam Epitaxy | Pushpa Raj Pudasaini | Taschenbuch | 100 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783845417271 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The NATO Advanced Study Institute on 'Molecular Beam Epitaxy (MBE) and Heterostructures' was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.…