Verlag: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Sprache: Englisch
Anbieter: ThriftBooks-Atlanta, AUSTELL, GA, USA
EUR 49,23
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In den WarenkorbHardcover. Zustand: Good. No Jacket. Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less 2.
Verlag: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Sprache: Englisch
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 104,12
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In den WarenkorbZustand: New. In.
Verlag: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 109,08
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This 2007 book was the first to be devoted to the compact modeling of RF power FETs.
Verlag: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Sprache: Englisch
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 155,01
Währung umrechnenAnzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 209,26
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In den WarenkorbHardcover. Zustand: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
Verlag: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 226,69
Währung umrechnenAnzahl: 1 verfügbar
In den WarenkorbBuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.