Computational Microelectronics (97 Ergebnisse)

Hard Cover. Zustand: Good. No Jacket. Hard cover. Usual ex-library features. The interior is clean and tight. Binding is good. Cover shows slight wear. Library label taped on front. 193 pages. Ex-Library.

2003th ed. 16 x 23 cm. 270 pages. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

gebundene Ausgabe. Zustand: Gut. 351 Seiten Der Erhaltungszustand des hier angebotenen Werks ist trotz seiner Bibliotheksnutzung sauber. Es befindet sich neben dem Rückenschild lediglich ein Bibliotheksstempel im Buch; ordnungsgemäß entwidmet. Buchblock vorne leicht gebrochen, aber weiter stabil. In ENGLISCHER Sprache. Sprache: Englisch Gewicht in Gramm: 760.

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Zustand: New.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. pp. 427.

Zustand: Good. 1st Edition. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Zustand: Gut. Zustand: Gut | Seiten: 283 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva tion of interface or boundary conditions for semiconductor device simula tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand ing of the basic semiconductor equations, while the boundary conditions for these equations received very much less attention. Until today on many occasions one could get the impression that boundary conditions are unimportant accessories; they do not stand on their own besides the bulk transport equations, although it is clear that they are of course a necessary complement of these.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs). Unlike IC devices, however, microtransducers must interact with their environment, so their numerical simulation is considerably more complex. While the design of ICs aims at suppressing 'parasitic' effects, microtransducers thrive on optimizing the one or the other such effect. The challenging quest for physical models and simulation tools enabling microtransducer CAD is the topic of this book. The book is intended as a text for graduate students in Electrical Engineering and Physics and as a reference for CAD engineers in the microsystems industry.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - As the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a 'virtual fab' S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with 'robust', 'proven' tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in dependent from each other, with a completely different background and different intentions in mind. At this time, some important monographs appeared or have been in preparation. There are the three 'classical' ones, from our point of view: the so-called '1984 Guide' [12J by Brandt, the 'Multi-Grid Methods and Applications' [49J by Hackbusch and the so-called 'Fundamentals' [132J by Stiiben and Trottenberg. Stiiben and Trottenberg in [132J state a 'delayed acceptance, resent ments' with respect to multigrid algorithms. They complain: 'Nevertheless, even today's situation is still unsatisfactory in several respects. If this is true for the development of standard methods, it applies all the more to the area of really difficult, complex applications.' In spite of all the above mentioned publications and without ignoring important theoretical and practical improvements of multigrid, this situa tion has not yet changed dramatically. This statement is made under the condition that a numerical principle like multigrid is 'accepted', if there exist 'professional' programs for research and production purposes. 'Professional' in this context stands for 'solving complex technical prob lems in an industrial environment by a large community of users'. Such a use demands not only for fast solution methods but also requires a high robustness with respect to the physical parameters of the problem.

Hardcover. Zustand: Good. Good condition item with wear and markings, ex-library.

Taschenbuch. Zustand: Neu. Microtransducer CAD | Physical and Computational Aspects | Arokia Nathan (u. a.) | Taschenbuch | xviii | Englisch | 2013 | Springer | EAN 9783709173213 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Zustand: Neu. The Drift Diffusion Equation and Its Applications in MOSFET Modeling | Wilfried Hänsch | Taschenbuch | xii | Englisch | 2011 | Springer | EAN 9783709190975 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Modelling of Interface Carrier Transport for Device Simulation | Dietmar Schroeder | Taschenbuch | xi | Englisch | 2012 | Springer | EAN 9783709173688 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Zustand: New. pp. xii + 351 Illus.

Zustand: New. pp. ix + 193 Illus.

Hardcover Jul 07, 1998. Zustand: Used: Very Good. Inkl. Rechnung nach §19; Buch stammt aus aufgelà ster Buchsammlung; Label, Stempel und Notizen mà glich.

Kartoniert / Broschiert. Zustand: New.

Zustand: New. pp. 268 101 Illus.

Hardcover. Zustand: Brand New. 1st edition. 221 pages. 9.61x6.69x0.56 inches. In Stock.