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Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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Taschenbuch. Zustand: Neu. Materials Fundamentals of Gate Dielectrics | Alexandra Navrotsky (u. a.) | Taschenbuch | viii | Englisch | 2011 | Springer | EAN 9789048167869 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Sprache: Englisch
Verlag: Springer Netherlands, Springer, 2011
ISBN 10: 9048167868 ISBN 13: 9789048167869
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of thesematerials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
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In den WarenkorbPaperback. Zustand: Brand New. 484 pages. 9.25x6.00x1.09 inches. In Stock.
Anbieter: Trendbee - Abdullah Battal, Erding, Deutschland
Taschenbuch. Zustand: Sehr gut. 484 Seiten; Der Artikel ist in einem sehr guten Zustand und wurde nach den Trendbee-QualitÃtssicherungsstandards umfassend geprÃft. EBE-0005-10-04-2021 Sprache: Englisch Gewicht in Gramm: 830.