Anbieter: Romtrade Corp., STERLING HEIGHTS, MI, USA
Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 156,04
Anzahl: 4 verfügbar
In den WarenkorbZustand: New. pp. 624.
Anbieter: PBShop.store UK, Fairford, GLOS, Vereinigtes Königreich
EUR 171,23
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In den WarenkorbHRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.
EUR 195,70
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. ALVIN W. STRONG, PhD, is retired from IBM in Essex Junction, Vermont. He holds nineteen patents, has authored or coauthored a number of papers, and is a member of the IEEE and chair of the JEDEC 14.2 standards subcommittee.ERNEST Y. WU, PhD, is a Senior Tec.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 264,05
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In den WarenkorbHardcover. Zustand: Brand New. 1st edition. 624 pages. 9.50x6.50x1.25 inches. In Stock.
Anbieter: Kennys Bookstore, Olney, MD, USA
EUR 288,41
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In den WarenkorbZustand: New. This invaluable resource tells the complete story of failure mechanisms from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. Series: IEEE Press Series on Microelectronic Systems. Num Pages: 624 pages, Illustrations. BIC Classification: TJFC; UY. Category: (P) Professional & Vocational. Dimension: 235 x 162 x 34. Weight in Grams: 982. . 2009. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Neuware - A comprehensive treatment of all aspects of CMOS reliability wearout mechanismsThis book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers:\* Introduction to Reliability\* Gate Dielectric Reliability\* Negative Bias Temperature Instability\* Hot Carrier Injection\* Electromigration Reliability\* Stress VoidingChapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.