Varun sharma (64 Ergebnisse)

Zustand: New.

Zustand: New. pp. 199.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. Brand New. Soft Cover International Edition. Different ISBN and Cover Image. Priced lower than the standard editions which is usually intended to make them more affordable for students abroad. The core content of the book is generally the same as the standard edition. The country selling restrictions may be printed on the book but is no problem for the self-use. This Item maybe shipped from US or any other country as we have multiple locations worldwide.…

Zustand: New. Brand New. Soft Cover International Edition. Different ISBN and Cover Image. Priced lower than the standard editions which is usually intended to make them more affordable for students abroad. The core content of the book is generally the same as the standard edition. The country selling restrictions may be printed on the book but is no problem for the self-use. This Item maybe shipped from US or any other country as we have multiple locations worldwide.…

Zustand: New. In English. Sharma, Varun (illustrator).

Zustand: New. In English. Sharma, Varun (illustrator).

Zustand: New. In English.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. In English.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. In English. Sharma, Varun (illustrator).

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. In English.

Paperback. Zustand: Brand New. 102 pages. Hindu language. 5.06x0.24x7.81 inches. In Stock.

Zustand: New.

Zustand: New.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New.

Zustand: New. In English.

Zustand: New. In English.

Paperback. Zustand: Brand New. 88 pages. 8.66x5.91x0.20 inches. In Stock.

Zustand: New.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Project Report from the year 2014 in the subject Chemistry - Other, grade: 1.0, Dresden Technical University (Technische Universität Dresden), course: Semiconductor Technology, language: English, abstract: Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique based on self-terminating sequential gas reactions for a conformal and precise growth down to few nanometers range. Ideally due to the self-terminating reactions, ALD is a surface-controlled process, where process parameters other than thechoice of precursors, substrates, and deposition temperature have little or no influence. In spite of the numerous applications of growth by ALD, many chemical and physical processes that control ALD growth are not yet sufficientlyunderstood.Aim of this student research project is to develop an Aluminium Oxide (Al 2 O 3 ) ALD process from trimethylaluminum (TMA) and Ozone in comparison of two shower head designs. Then studying the detailed characteristics of Al 2 O 3 ALD process using various measurement techniques such as Spectroscopic Ellipsometry (SE), x-ray photoelec-tron spectroscopy (XPS), atomic force microscopy (AFM). The real-time ALD growth was studied by in-situ SE. In-situ SE is very promising technique that allows the time-continuous as well as time-discrete measurement of the actual growth over an ALD process time. The following ALD process parameters were varied and their inter-dependencies were studied in detail: exposure times of precursor and co-reactant as well as Argon purge times, the deposition temperature, total process pressure, flow dynamics of two different shower head designs. The effect of varying these ALD process parameters was studied by looking upon ALD cycle attributes. Various ALD cycle attributes are: TMA molecule adsorption (M ads ), Ligand removal (L rem ), growth kinetics (K O3 ) and growth per cycle (GPC).…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Master's Thesis from the year 2015 in the subject Physics - Electrodynamics, grade: 1.0, Dresden Technical University (Faculty of Electrical and Computer Engineering/Institute of Semiconductors and Microsystems), course: Nanoelectronic Systems, language: English, abstract: Nickel and nickel(II) oxide are widely used in advanced electronic devices. In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with hydrogen as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors ( 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. [.]. …