tibor grasser (42 Ergebnisse)

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. In.

Zustand: New. In.

Zustand: New. In.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. In.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Taschenbuch. Zustand: Neu. Hot Carrier Degradation in Semiconductor Devices | Tibor Grasser | Taschenbuch | x | Englisch | 2016 | Springer | EAN 9783319359120 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Zustand: New. In.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy ('become hot'), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Zustand: New.

Taschenbuch. Zustand: Neu. Noise in Nanoscale Semiconductor Devices | Tibor Grasser | Taschenbuch | vi | Englisch | 2021 | Springer | EAN 9783030375027 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Paperback. Zustand: Brand New. 735 pages. 9.25x6.10x1.47 inches. In Stock.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects.Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;Enables readers to design more reliable semiconductor devices;Offers the most up-to-date information on point defects, based on physical microscopic models.

Zustand: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Zustand: New. In.

Zustand: New. In.

Taschenbuch. Zustand: Neu. Bias Temperature Instability for Devices and Circuits | Tibor Grasser | Taschenbuch | xi | Englisch | 2016 | Springer | EAN 9781493955299 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Hardcover. Zustand: Brand New. 517 pages. 9.25x6.25x1.50 inches. In Stock.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy ('become hot'), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects.Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;Enables readers to design more reliable semiconductor devices;Offers the most up-to-date information on point defects, based on physical microscopic models.

Hardcover. Zustand: Brand New. 735 pages. 9.25x6.10x1.69 inches. In Stock.

Taschenbuch. Zustand: Neu. Simulation of Semiconductor Processes and Devices 2007 | SISPAD 2007 | Tibor Grasser (u. a.) | Taschenbuch | xv | Englisch | 2017 | Springer | EAN 9783709119112 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The 'Twelfth International Conference on Simulation of Semiconductor Processes and Devices' (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Zustand: New. This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent .

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The 'Twelfth International Conference on Simulation of Semiconductor Processes and Devices' (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.