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Verlag: Mcgraw-Hill Education - Europe Nov 2012, 2012
ISBN 10: 007175427XISBN 13: 9780071754279
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Neuware - Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
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Verlag: Artech House Publishers, 1996
ISBN 10: 089006587XISBN 13: 9780890065877
Anbieter: Buchpark, Trebbin, Deutschland
Buch
Zustand: Gut. Illustrated. 227 S. Gebrauchs- und Lagerspuren. Aus der Auflösung einer renommierten Bibliothek. Kann Stempel beinhalten. 1302708/203 Gebundene Ausgabe, Maße: 15.82 cm x 1.78 cm x 23.55 cm.
Verlag: De Gruyter, 2016
ISBN 10: 1501510509ISBN 13: 9781501510502
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green ElectronicsB. Microelectronic Circuits and SystemsC. Integrated Circuits and Packaging TechnologiesD. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: 'The Future Lithographic Technology for Semiconductor Fabrication' by Dr. Alek C. Chen, Asia ASML, Taiwan. 'Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics' by Prof. Toshiaki Tsuchiya, Shimane University, Japan. 'The Art and Science of Packaging High-Coupling Photonics Devices and Modules', by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. 'Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies', by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.
Verlag: Springer US, 1998
ISBN 10: 0306457245ISBN 13: 9780306457241
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Verlag: Springer US, 1998
ISBN 10: 0412146010ISBN 13: 9780412146015
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Verlag: Springer US, 2012
ISBN 10: 1461374731ISBN 13: 9781461374732
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Verlag: Springer US, 2013
ISBN 10: 1489919066ISBN 13: 9781489919069
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Verlag: ARTECH HOUSE INC, 1994
ISBN 10: 0890066965ISBN 13: 9780890066966
Anbieter: moluna, Greven, Deutschland
Buch
Zustand: New. InhaltsverzeichnisSemiconductor device fundamentals - energy band theory, statistics of free carriers in semiconductors, generation and recombination processes, Boltzmann transport equation, drift and diffusion mechanisms, carrier scatte.
Verlag: CRC Press 2017-07-27, Boca Raton, 2017
ISBN 10: 1138893072ISBN 13: 9781138893078
Anbieter: Blackwell's, London, Vereinigtes Königreich
Buch
paperback. Zustand: New. Language: ENG.
Verlag: Jenny Stanford Publishing, 2010
ISBN 10: 9814241083ISBN 13: 9789814241083
Anbieter: Reuseabook, Gloucester, GLOS, Vereinigtes Königreich
Buch
Hardcover. Zustand: Used; Very Good. Dispatched, from the UK, within 48 hours of ordering. Though second-hand, the book is still in very good shape. Minimal signs of usage may include very minor creasing on the cover or on the spine. Damaged cover. The cover of is slightly damaged for instance a torn or bent corner.
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