Ledentsov nikolai n (19 Ergebnisse)

Zustand: Gut. 1. 338 p. Ex-Library book in good condition. 9780471973881 Sprache: Englisch Gewicht in Gramm: 603.

Zustand: Good. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Zustand: Good. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. In English.

Zustand: New. In English.

hardcover. Zustand: Good.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.…

Taschenbuch. Zustand: Neu. Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy | Nikolai N. Ledentsov | Taschenbuch | Springer Tracts in Modern Physics | viii | Englisch | 2010 | Springer | EAN 9783642085079 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Zustand: New. - Up-to-date overview- Important topicThe book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crys.

Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.…

Buch. Zustand: Neu. Neuware - The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.…

Hardcover. Zustand: gut. 1999. Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy In deutscher Sprache. pages.

Zustand: New. In English.

Hardcover. Zustand: Brand New. 1st edition. 399 pages. 11.00x6.75x1.00 inches. In Stock.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The general trend in modern solid state physics and technology is to make things smaller. The size of key elements in modern devices approaches the nanometer scale, for both vertical and lateral dimensions. Ultrathin layers, or quantum wells, had already gained broad acceptance for applications in micro- and optoelectronics by the 1980s. However, the development of het erostructures with lower dimensionality (quantum wires, where carriers are confined in two directions and move freely in one, and quantum dots, where carriers are confined in all three directions) took longer. It became clear that quantum wire and dot structures constitute the utmost technological chal lenge, whilst providing enormous advantages. At the beginning of the 1990s, a few outstanding discoveries concern ing self-organization phenomena at crystal surfaces for direct fabrication of nanostructures led to a change in the major paradigms of semiconductor physics and technology. This new approach in epitaxy enables fast parallel fabrication of large densities of quantum dots or wires for almost unlimited material combinations and has become the basis for a powerful new branch of nanotechnology. Quantum dots, coherent inclusions in a semiconductor ma trix with zero-dimensional electronic properties persistent up to room tem perature, have demonstrated fascinating physical properties and given birth to a novel generation of optoelectronic devices and systems.…

Zustand: New. In English.

Zustand: New. pp. 338.