Khang d (3 Ergebnisse)
- Softcover
Anbieter: Speedyhen, Hertfordshire, Vereinigtes KönigreichSpeedyhen
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 71,46
EUR 47,85 VersandVersand von Vereinigtes Königreich nach USAAnzahl: 1 verfügbar
Zustand: NEW.
- Softcover
Anbieter: Herman H. J. Lynge & Søn ILAB-ABF, Copenhagen, DänemarkHerman H. J. Lynge & Søn ILAB-ABF
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Gebraucht
EUR 192,88
EUR 42,00 VersandVersand von Dänemark nach USAAnzahl: 1 verfügbar
In den Warenkorb(New York, American Telephone and Telegraph Company), 1967. 8vo. Original full green cloth. Volume 46, 1967-2 of "The Bell System Technical Journal". Library stamp to free front end-paper and title-page. Minor bumping to extremities. A nice and clean copy. [Mentioned article:] Pp: 1288-1295. [Entire issue: 837-1658]. First publi…cation of Khang and Sze's seminal and exceedingly influential paper on Floating Gate MOSFET. The technology is today used in flash memory cards. "In 1967, Kahng and Sze reported the first floating-gate structure as a mechanism for nonvolatile information storage. Since then, floating-gate transistors have been used widely to store digital information for long periods in structures such as EPROMs, EEPROMs, and Flash memories." (Hasler, Paul. FLOATING-GATE DEVICES, (1) p.).
A Floating Gate and Its Application to Memory Devices. - [THE TECHNOLOGY USED IN FLASH MEMORY CARDS]
- Softcover
Anbieter: Herman H. J. Lynge & Søn ILAB-ABF, Copenhagen, DänemarkHerman H. J. Lynge & Søn ILAB-ABF
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Gebraucht
EUR 303,10
EUR 42,00 VersandVersand von Dänemark nach USAAnzahl: 1 verfügbar
In den WarenkorbNew York, (American Telephone and Telegraph Company), 1967. 8vo. Volume XLVI, July-August, No. 6, 1967 of "The Bell System Technical Journal". In the original printed blue wrappers. A bit of sunning to spine, previous owner's stamp to front wrapper. Otherwise a very nice and clean, internally near mint, copy. Pp. 1288-1295. [Ent…ire issue: Pp. 1055-1300]. First publication of Khang and Sze's seminal and exceedingly influential paper on Floating Gate MOSFET. The technology is today used in flash memory cards."In 1967, Kahng and Sze reported the first floating-gate structure as a mechanism for nonvolatile information storage. Since then, floating-gate transistors have been used widely to store digital information for long periods in structures such as EPROMs, EEPROMs, and Flash memories." (Hasler, Paul. FLOATING-GATE DEVICES, (1) p.).
