jenã patrick (9 Ergebnisse)

Zustand: Wie neu. Standard Version. OVP B2466-7 4042662330343 Sprache: Deutsch Gewicht in Gramm: 500 DVD, Maße: 19 cm x 13.5 cm x 1.4 cm.

Hardcover. Zustand: Near Fine. Zustand des Schutzumschlags: Near Fine. 1st Edition. 4° - 190pp - Color & B/w reproductions. A History of Travel from the tourist traffiv in Ancient Rome, the Grand Tour and Italomania to the present-day tourism. First edition, text in English language. Original boards, original dust-jacket and slipcase. In Near Fine condition.

Zustand: New. In.

Taschenbuch. Zustand: Neu. High-Frequency GaN Electronic Devices | Patrick Fay (u. a.) | Taschenbuch | viii | Englisch | 2020 | Springer | EAN 9783030202101 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Zustand: New. In.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;Provides 'vertically integrated' coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;Includes fundamental physics, as well as numerical simulations and experimental realizations.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;Provides 'vertically integrated' coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;Includes fundamental physics, as well as numerical simulations and experimental realizations.

Hardcover. Zustand: Brand New. 320 pages. 9.25x6.10x0.83 inches. In Stock.

dvd. Zustand: Sehr gut. Seiten; OVP in Schutzfolie, Artikel stammt aus Nichtraucherhaushalt! NB2-6087 Sprache: Deutsch Gewicht in Gramm: 500.