gusev evgeni (31 Ergebnisse)

Zustand: New. pp. ix + 207 143 Illus.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

16 x 23 cm. XII, 492 S. XI, 492 p. Softcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (NATO Science Series II: Mathematics, Physics and Chemistry). Sprache: Englisch.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Symposium S, 'Microelectromechanical Systems - Materials and Devices IV', held November 29-December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts, focused on micro- and nanoelectromechanical systems (MEMS/NEMS), technologies which were spawned from the fabrication and integration of small-scale mechanical, electrical, thermal, magnetic, fluidic and optical sensors and actuators with micro-electronic components. MEMS and NEMS have enabled performance enhancements and manufacturing cost reductions in a number of applications, including optical displays, acceleration sensing, radio-frequency switching, drug delivery, chemical detection and power generation and storage. Although originally based on silicon microelectronics, the reach of MEMS and NEMS has extended well beyond traditional engineering materials and now includes nanomaterials (nanotubes, nanowires, nanoparticles), smart materials (piezoelectric and ferroelectric materials, shape memory alloys, pH-sensitive polymers), metamaterials and biomaterials (ceramic, metallic, polymeric, composite-based implant materials). While these new materials provide more freedom with regards to the design space of MEMS and NEMS, they also introduce a number of new fabrication and characterization challenges not previously encountered with silicon-based technology.

Zustand: New. pp. 378 Illus.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 508 | Sprache: Englisch | Produktart: Bücher | The goal of this NATO Advanced Research Workshop (ARW) entitled ¿Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices¿, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Zustand: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 408 | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 314 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Buch. Zustand: Neu. Neuware -This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 408 pp. Englisch.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The high level of attention and interest of the global community to NANO science and technology to a large extent is linked to the GIGAntic challenges for the c- tinuing growth of information technology, which sparked an unprecedented level of interdisciplinary and international cooperation among industrial and academic researchers, companies, IT market rivals, and countries, including former political and military rivals . Microelectronics technologies have reached a new stage in their development: The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new ma- rials are being introduced into microelectronics manufacture at an unprecedented rate , and alternative technologies to mainstream complementary metal-oxide sem- conductors (CMOSs) are being considered . The very dynamic stage of science and technology related to the advanced and future electronics and photonics creates a growing gap between the large number of rapid publications and nanotechnology highlights in media on one side and fundamental understanding of underlying phenomena and an adequate evaluation of scientific discoveries and technological innovations on the other side. Writing a tutorial book on fundamentals of science and technology for electronics at this time is almost the same level of challenge as writing a history book during a revolution.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Paperback. Zustand: Brand New. 376 pages. 9.25x6.10x0.85 inches. In Stock.

Paperback. Zustand: Brand New. 383 pages. 9.00x6.00x0.92 inches. In Stock.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 328 | Sprache: Englisch | Produktart: Bücher | A NATO Advanced Research Workshop (ARW) entitled ¿Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators¿ was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to examine (at a fundamental level) the very complex scientific issues that pertain to the use of micro- and nano-electromechanical systems (MEMS and NEMS), devices and technologies in next generation commercial and defen- related applications. Micro- and nano-electromechanical systems represent rather broad and diverse technological areas, such as optical systems (micromirrors, waveguides, optical sensors, integrated subsystems), life sciences and lab equipment (micropumps, membranes, lab-on-chip, membranes, microfluidics), sensors (bio-sensors, chemical sensors, gas-phase sensors, sensors integrated with electronics) and RF applications for signal transmission (variable capacitors, tunable filters and antennas, switches, resonators). From a scientific viewpoint, this is a very multi-disciplinary field, including micro- and nano-mechanics (such as stresses in structural materials), electronic effects (e. g. charge transfer), general electrostatics, materials science, surface chemistry, interface science, (nano)tribology, and optics. It is obvious that in order to overcome the problems surrounding next-generation MEMS/NEMS devices and applications it is necessary to tackle them from different angles: theoreticians need to speak with mechanical engineers, and device engineers and modelers to listen to surface physicists. It was therefore one of the main objectives of the workshop to bring together a multidisciplinary team of distinguished researchers.

Zustand: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 170 x 28. Weight in Grams: 962. . 1998. Hardback. . . . . Books ship from the US and Ireland.

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 508 | Sprache: Englisch | Produktart: Bücher | The goal of this NATO Advanced Research Workshop (ARW) entitled ¿Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices¿, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Zustand: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 26. Weight in Grams: 1590. . 1998. Softcover reprint of the original 1st ed. 1998. Paperback. . . . . Books ship from the US and Ireland.

Buch. Zustand: Neu. Neuware -A NATO Advanced Research Workshop (ARW) entitled ¿Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators¿ was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to examine (at a fundamental level) the very complex scientific issues that pertain to the use of micro- and nano-electromechanical systems (MEMS and NEMS), devices and technologies in next generation commercial and defen- related applications. Micro- and nano-electromechanical systems represent rather broad and diverse technological areas, such as optical systems (micromirrors, waveguides, optical sensors, integrated subsystems), life sciences and lab equipment (micropumps, membranes, lab-on-chip, membranes, microfluidics), sensors (bio-sensors, chemical sensors, gas-phase sensors, sensors integrated with electronics) and RF applications for signal transmission (variable capacitors, tunable filters and antennas, switches, resonators). From a scientific viewpoint, this is a very multi-disciplinary field, including micro- and nano-mechanics (such as stresses in structural materials), electronic effects (e. g. charge transfer), general electrostatics, materials science, surface chemistry, interface science, (nano)tribology, and optics. It is obvious that in order to overcome the problems surrounding next-generation MEMS/NEMS devices and applications it is necessary to tackle them from different angles: theoreticians need to speak with mechanical engineers, and device engineers and modelers to listen to surface physicists. It was therefore one of the main objectives of the workshop to bring together a multidisciplinary team of distinguished researchers.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 328 pp. Englisch.

Buch. Zustand: Neu. Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled ¿Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices¿, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 508 pp. Englisch.

Zustand: New. pp. xi + 492.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - A NATO Advanced Research Workshop (ARW) entitled 'Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators' was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to examine (at a fundamental level) the very complex scientific issues that pertain to the use of micro- and nano-electromechanical systems (MEMS and NEMS), devices and technologies in next generation commercial and defen- related applications. Micro- and nano-electromechanical systems represent rather broad and diverse technological areas, such as optical systems (micromirrors, waveguides, optical sensors, integrated subsystems), life sciences and lab equipment (micropumps, membranes, lab-on-chip, membranes, microfluidics), sensors (bio-sensors, chemical sensors, gas-phase sensors, sensors integrated with electronics) and RF applications for signal transmission (variable capacitors, tunable filters and antennas, switches, resonators). From a scientific viewpoint, this is a very multi-disciplinary field, including micro- and nano-mechanics (such as stresses in structural materials), electronic effects (e. g. charge transfer), general electrostatics, materials science, surface chemistry, interface science, (nano)tribology, and optics. It is obvious that in order to overcome the problems surrounding next-generation MEMS/NEMS devices and applications it is necessary to tackle them from different angles: theoreticians need to speak with mechanical engineers, and device engineers and modelers to listen to surface physicists. It was therefore one of the main objectives of the workshop to bring together a multidisciplinary team of distinguished researchers.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Hardcover. Zustand: Brand New. 1st edition. 314 pages. 9.25x6.25x1.00 inches. In Stock.