Goldfarb bernard (27 Ergebnisse)

Softcover. Zustand: Bon. Ancien livre de bibliothèque avec équipements. Edition 2000. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Edition 2000. Ammareal gives back up to 15% of this item's net price to charity organizations.…

Softcover. Zustand: Bon. Ancien livre de bibliothèque avec équipements. Edition 2004. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Edition 2004. Ammareal gives back up to 15% of this item's net price to charity organizations.…

Zustand: good. Befriedigend/Good: Durchschnittlich erhaltenes Buch bzw. Schutzumschlag mit Gebrauchsspuren, aber vollständigen Seiten. / Describes the average WORN book or dust jacket that has all the pages present.

Paperback. Zustand: New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Zustand: New.

Zustand: New.

hardcover. Zustand: Very Good.

Zustand: As New. Unread book in perfect condition.

Zustand: New.

Zustand: New.

Zustand: New.

Zustand: New. 250.

Zustand: New.

Couverture souple. Zustand: bon. R320106631: 1993. In-4. Broché. Bon état, Couv. convenable, Dos satisfaisant, Intérieur frais. 275 pages. . . . Classification Dewey : 310-Statistiques.

Couverture souple. Zustand: bon. RO40009382: 1993. In-8. Broché. Bon état, Couv. convenable, Dos satisfaisant, Intérieur frais. 275 pages augmentées de quelques grahiques et schémas en noir et blanc. . . . Classification Dewey : 310-Statistiques.

Zustand: As New. Unread book in perfect condition.

Zustand: New.

Hardback. Zustand: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities. …

Zustand: New. In English.

Paperback. Zustand: Brand New. reprint edition. 227 pages. 9.75x7.00x0.50 inches. In Stock.

Hardcover. Zustand: New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Zustand: New.

Gebunden. Zustand: New.

Zustand: As New. Unread book in perfect condition.

Hardback. Zustand: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities. …

Softcover. Zustand: Très bon. Ancien livre de bibliothèque avec équipements. Edition 2011. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Very good. Former library book. Edition 2011. Ammareal gives back up to 15% of this item's net price to charity organizations.…

Softcover. Zustand: gut. 2011. Introduction à la méthode statistique - 6e édition In deutscher Sprache. pages.