D nirmal (30 Ergebnisse)

Paperback. Zustand: Good. No Jacket. Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less.

Zustand: New.

Hardcover. Zustand: Fair. Dust Jacket Included. THE DUST JACKET HAS LIGHT SCUFFING TO THE EDGES WITH MINOR CREASING. THERE APPEARS TO HAVE BEEN SOME LIQUID DAMAGE AROUND THE JOINT IN THE BOOK WHICH IS ALL DRY AND CRINKLED BUT PAGES NOT DAMAGED. THE BINDING IS TIGHT BUT SLIGHT SPLIT AT THE BOTTOM TO THE FRONT. THE PAGES ARE GENERALLY CLEAN AND CREASE FREE. THIS IS A GOOD READABLE EXAMPLE OF AN INTERESTING BOOK.…

Soft cover. 8vo. pp xxiv, 101, vii, 33. Publisher's beige card jacket with black lettering at front and spine. Publisher's beige wraps. Facsimile reprint of the 1893 edition. Clean and unmarked throughout, however covers are rubbed along edges. Dust jacket is a bit marked and spotted with chips and tears at top and bottom of spine. Overall good plus.…

Zustand: New.

Zustand: New.

Soft cover. Zustand: Very Good. 1st Edition. 295 pp., illustrations, bibliography.

Zustand: New.

Zustand: New. In English.

Zustand: New. In English.

Zustand: New.

Paperback. Zustand: Brand New. 324 pages. 10.00x7.00x10.00 inches. In Stock.

Zustand: New. In English.

Paperback. Zustand: Brand New. 442 pages. 10.00x7.01x1.00 inches. In Stock.

Paperback. Zustand: Brand New. 302 pages. 9.18x6.12x9.21 inches. In Stock.

Zustand: New.

Zustand: New.

Zustand: New. In English.

Zustand: New. D. Nirmal currently serves as Dean of Academic Affairs at Karunya Institute of Technology and Sciences, India. Dr. Nirmal has played a key role in driving academic reforms, promoting outcome-based competency-focused curriculum frameworks, and facilitatin.

Zustand: New.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.…

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.…

Zustand: New.

Hardcover. Zustand: Brand New. 352 pages. 10.00x7.00x0.92 inches. In Stock.

Zustand: New. In English.

Buch. Zustand: Neu. Neuware - This book covers 2D materials, transistors, and low-power transistor technologies. It also discusses a wide range of semiconductor devices, including transistors, LEDs, energy harvesting devices, and spintronics devices. - Covers nanoscale semiconductor materials, low-power transistors, and applications in integrated circuits - Offers comprehensive coverage of design, simulation, and experimentation for a range of field-effect transistors - Highlights the importance of using piezoelectric nanogenerators for energy applications - Showcases the developments in nanoscale device simulation and opportunities in electronic fabrication - Explains the latest nanoscale sensors, micro- to nanoscale energyharvesting devices, and nano energy storage devices The book is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics, and communications engineering. …

Zustand: New.

Hardcover. Zustand: Brand New. 504 pages. 10.50x7.50x1.25 inches. In Stock.

Hardcover. Zustand: Brand New. 328 pages. 9.50x6.25x0.75 inches. In Stock.

Buch. Zustand: Neu. Neuware.