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Materials and Physics for Novolatile Memories
Fujisaki, Y. (Editor)/ Waser, R. (Editor)/ Liu, T. (Editor)/ Bonafos, C. (Editor)
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Hardcover. Zustand: Brand New. 199 pages. 9.00x6.00x0.55 inches. In Stock.
Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling: Volume 1252 (MRS Proceedings)
. Ed(s): Ramanathan, Shriram; Guha, Supratik; Mannhart, Jochen; Kummel, Andrew C.; Watanabe, Heiji; Thayne, Iain; Majhi, Prashant; Bonafos, Caroline;
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Zustand: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Ramanathan, Shriram; Guha, Supratik; Mannhart, Jochen; Kummel, Andrew C.; Watanabe, Heiji; Thayne, Iain; Majhi, Prashant; Bonafos, Caroline; Fujisaki, Yoshihisa; Dimitrakis, P. Serie…s: MRS Proceedings. Num Pages: Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 15. Weight in Grams: 364. . 2010. hardcover. . . . . Books ship from the US and Ireland.
Materials and Physics for Nonvolatile Memories II: Spring 2010, April 5-9, San Francisco, California, U.s.a.
Bonafos, C. (Editor)/ Fujisaki, Y. (Editor)/ Dimitrakis, P. (Editor)/ Tokumitsu, E. (Editor)
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EUR 174,11
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Hardcover. Zustand: Brand New. 255 pages. 9.00x6.25x0.75 inches. In Stock.
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Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, Calif…ornia. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.
