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Zustand: Very Good. Most items will be dispatched the same or the next working day. A copy that has been read, but is in excellent condition. Pages are intact and not marred by notes or highlighting. The spine remains undamaged.

Decorative Cloth. 1st Edition. Hard decorative cloth covers, near fine, no dust wrapper as issued, pp xxv, 257.

Zustand: New. In.

No Binding. Zustand: Very Good. F HERVE (illustrator). A splendid original antique hand-coloured print, colouring not contemporary but delicately and expertly executed, mounted (matted) and ready to frame. Shows a view of a high mountain pass with a waterfall in the foreground, 'drawn from nature by F Herve'.

Taschenbuch. Zustand: Neu. Negative Differential Resistance and Instabilities in 2-D Semiconductors | N. Balkan (u. a.) | Taschenbuch | 454 S. | Englisch | 2012 | Springer US | EAN 9781461362203 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.

Zustand: Very Good. illustrated edition. Former library copy. Pages intact with possible writing/highlighting. Binding strong with minor wear. Dust jackets/supplements may not be included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Pais, Institut français d'Etudes anatoliennes d'Istanbul, 1994. in-4. 246,[1] pp. Broché. (Varia Anatolica.7; couv.lég. usée).