ahn charles (12 Ergebnisse)

Zustand: Gebraucht - Sehr gut. Ahn Na Lim (illustrator). Taschenbuch - 2017 - h4.

Zustand: Good. Ahn Na Lim (illustrator). Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.

Paperback. Zustand: Brand New. Ahn Na Lim (illustrator). 420 pages. 9.50x7.00x1.00 inches. In Stock.

Hardcover. Zustand: Very Good. No Jacket. 1st Edition. [1st edition], 1st printing ; xv, 988 p. : ill. ; 29 cm. ; ISBN: 080161838X; 9780801618383; National Library: 8805078 LCCN: 88-12756 ; LC: RM700; Dewey: 617 ; OCLC: 17982763 ; purple cloth ; no dustjacket ; Contents: Patient evaluation -- Brain damage and stroke -- Spinal cord trauma -- Systemic disorders and special services -- Musculoskeletal disorders -- Pain syndromes -- ALlied therapies and technology in rehabilitation -- Psychosocial and economic aspects of rehabilitation. ; Vex-lib, stamps, labels ; ownership stamp on title page ; large, heavy volume ; VG. Book.

Zustand: New. In English.

Taschenbuch. Zustand: Neu. Physics of Ferroelectrics | A Modern Perspective | Karin M. Rabe (u. a.) | Taschenbuch | Topics in Applied Physics | xii | Englisch | 2010 | Springer | EAN 9783642070969 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

Hardcover. Zustand: Brand New. 1st edition. 388 pages. 9.75x6.25x1.00 inches. In Stock.

Zustand: New. In.

Buch. Zustand: Neu. Neuware - This set of books provide a detailed introduction to molecular beam epitaxy (MBE) of Oxides and modern characterization techniques used to analyze thin oxide films. A reprint volume containing seminal papers in the field allows the reader to experience the excitement of discovery first hand in the voices of people who made those discoveries. MBE revolutionized the semiconductor technology, but its introduction to oxide growth has been delayed, owing to a complex set of reasons that range from practical difficulties (chemically aggressive environment and high temperature) to fundamental differences from semiconductors (reactive growth). It aims to be a useful reference to an expert as well as a guide to a graduate student.

Pas de couverture. Zustand: bon. R260130898: 1884. In-12. En feuillets. Etat passable, Livré sans Couverture, Dos abîmé, Intérieur acceptable. 116 pages en feuillets. Manques dos et plats. . . . Classification Dewey : 420-Langue anglaise. Anglo-saxon.