Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics, 93, Band 93) - Hardcover

Buch 8 von 37: Topics in Applied Physics
 
9783540407188: Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics, 93, Band 93)
Hardcover
ISBN 10: 3540407189 ISBN 13: 9783540407188
Verlag: Springer, 2004

Inhaltsangabe

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

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Von der hinteren Coverseite

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Verlag
Springer
Erscheinungsdatum
2004
Sprache
Englisch
ISBN 10 
3540407189
ISBN 13 
9783540407188
Einband
Gebundene Ausgabe
Anzahl der Seiten
304
Herausgeber
Ishiwara Hiroshi, Okuyama Masanori, Arimoto Yoshihiro
Kontakt zum Hersteller
Dt. Universitätsverlag
buchhandel-buch@springer.com

Abraham-Lincoln-Str. 46
Wiesbaden
65198
Deutschland

Weitere beliebte Ausgaben desselben Titels

9783642073847: Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics, Band 93)

Vorgestellte Ausgabe

ISBN 10:  3642073840 ISBN 13:  9783642073847
Verlag: Springer, 2010
Softcover