Progress in Nano-Electro Optics IV: Characterization of Nano-Optical Materials and Optical Near-Field Interactions (Springer Series in Optical Sciences, 109, Band 109) - Hardcover

Buch 26 von 234: Springer Series in Optical Sciences
 
9783540232360: Progress in Nano-Electro Optics IV: Characterization of Nano-Optical Materials and Optical Near-Field Interactions (Springer Series in Optical Sciences, 109, Band 109)

Inhaltsangabe

This volume focuses on the characterization of nano-optical materials and optical near-field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.

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Über die Autorin bzw. den Autor

Dr. M. Ohtsu is currently a professor of The University of Tokyo. He is also a project leader of SORST Nanophotonics Team, Japan Science and TechnologyAgency. He has been a president of IEEE LEOS Japan Chapter. He has also been a member of the board of directors, Japan Society of Applied Physics. He is a fellow of Optical Society of America.

Von der hinteren Coverseite

This volume focuses on the characterization of nano-optical materials and optical-near field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.

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Weitere beliebte Ausgaben desselben Titels

9783642062261: Progress in Nano-Electro Optics IV: Characterization of Nano-Optical Materials and Optical Near-Field Interactions (Springer Series in Optical Sciences, Band 109)

Vorgestellte Ausgabe

ISBN 10:  3642062261 ISBN 13:  9783642062261
Verlag: Springer, 2010
Softcover