COUPLED DIFFUSION IMPURITY ATOMS & POINT DEFECTS SILICON - Hardcover

Velichko Oleg

 
9781786347152: COUPLED DIFFUSION IMPURITY ATOMS & POINT DEFECTS SILICON
Hardcover
ISBN 10: 1786347156 ISBN 13: 9781786347152
Verlag: WSPC (Europe), 2019

Inhaltsangabe

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out. Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

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Verlag
WSPC (Europe)
Erscheinungsdatum
2019
Sprache
Englisch
ISBN 10 
1786347156
ISBN 13 
9781786347152
Einband
Gebundene Ausgabe
Anzahl der Seiten
404
Kontakt zum Hersteller
preigu GmbH & Co. KG
mail@preigu.de

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