Inhaltsangabe
Preface. Acknowledgments. 1: Introduction. 1. Overview Of Sputtering For Technological Applications. 2. Plasma-Surface Interactions. 3. Charging Of Insulating Surfaces. 4. Overview Of The Monograph. 2:Basic Plasma Phenomenon. 1. The Plasma State. 2. Basic Plasma Structure. 3. Collisions. 4. Summary. 3: Plasma Sources Used For Sputter Deposition. 1. Direct Current (DC) Sources. 2. Alternating Current (AC) Sources. 3. Summary. 4: Response Of A Plasma To An Applied Bias. 1. General Considerations And Approximations. 2. Quasi-Static Approximation Of The Sheath. 3. Breakdown Of The Quasi-Static Approximation. 4. Transient Nature Of The Sheath. 5. Summary. 5: Sinusoidal Waveform. 1. Quasi-Static Regime. 2. Transient Sheath Regime. 3. Summary. 6: Pulsed Waveform. 1. Definition Of The Pulse. 2. Quasi-Static Response Of The System To An Applied Pulse. 3. Approximated Predictions Of Energy Spectra. 4. Higher Frequency Response Of The System To The Pulsed Waveform. 5. Comparison Between Sinusoidal And Pulsed Waveforms. 6. Summary. 7: Application Of A Pulsed Waveform To A Target: Pulsed Reactive Sputtering. 1. Introduction. 2. Application Of A Pulse For Arc Suppression (Predictions). 3. Application Of A Pulse To Reactive Sputtering (Practice). 4. Summary. 8: Application Of A Pulsed Waveform To A Substrate: Pulsed Bias Sputtering. 1. Introduction. 2. Considerations For Pulsed Biasing Of The Substrate. 3. Observed Flux Of Charge To A Pulsed Substrate. 4. Application Of A Pulsed Bias To Film Growth. 5. Summary. 9: Conclusions And Future Directions. 1. Conclusions. 2. Future Directions. References. Index.
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