A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes:
* The physics and operational characteristics of the different components
* The evolution of device structures the ultimate limitations on device and circuit performance
* Device miniaturization and simulation
* Issues of reliability and the hot carrier effect
* Digital and analog circuit building blocks
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C. Y. CHANG, PhD, is a National Chair Professor at the National Chiao Tung University in Hsinchu, Taiwan.
S. M. SZE, PhD, is UMC Chair Professor at the National Chiao Tung University.
A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes:
* The physics and operational characteristics of the different components
* The evolution of device structures the ultimate limitations on device and circuit performance
* Device miniaturization and simulation
* Issues of reliability and the hot carrier effect
* Digital and analog circuit building blocks
A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes:
* The physics and operational characteristics of the different components
* The evolution of device structures the ultimate limitations on device and circuit performance
* Device miniaturization and simulation
* Issues of reliability and the hot carrier effect
* Digital and analog circuit building blocks
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Anbieter: Better World Books: West, Reno, NV, USA
Zustand: Very Good. Former library copy. Pages intact with possible writing/highlighting. Binding strong with minor wear. Dust jackets/supplements may not be included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good. Artikel-Nr. GRP91402976
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Zustand: Gut. Zustand: Gut | Seiten: 744 | Sprache: Englisch | Produktart: Bücher | A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes: * The physics and operational characteristics of the different components * The evolution of device structures the ultimate limitations on device and circuit performance * Device miniaturization and simulation * Issues of reliability and the hot carrier effect * Digital and analog circuit building blocks. Artikel-Nr. 864748/3
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Anbieter: PBShop.store UK, Fairford, GLOS, Vereinigtes Königreich
HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000. Artikel-Nr. FW-9780471240679
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Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Zustand: New. pp. xii + 729 Illus. Artikel-Nr. 7480968
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Anbieter: moluna, Greven, Deutschland
Gebunden. Zustand: New. the production standard and component chapters is characteristically high (Contemporary Physics, Vol.42, No. 4 2001)C. Y. CHANG, PhD, is a National Chair Professor at the National Chiao Tung University in Hsinchu, Taiwan.S. M. SZE, PhD, is UMC Chair P. Artikel-Nr. 446915400
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Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
Hardcover. Zustand: Brand New. 1st edition. 729 pages. 9.50x6.50x1.25 inches. In Stock. Artikel-Nr. x-0471240672
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Anbieter: Kennys Bookstore, Olney, MD, USA
Zustand: New. Ultra-large scale integrated (ULSI) circuits are the next generation of semiconductor devices to follow the very large scale integrated (VLSI) circuits. This volume brings together researchers in the field to write a chapter on their own area of expertise. Editor(s): Chang, C.Y.; Sze, Simon M. Num Pages: 744 pages, Illustrations. BIC Classification: TJFC; UY. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 233 x 162 x 39. Weight in Grams: 1220. . 2000. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland. Artikel-Nr. V9780471240679
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Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Neuware - Ultrahoch integrierte Schaltkreise (ULSI) - die nächste Schaltkreisgeneration - werden zwar noch nicht industriell eingesetzt, sind aber das Objekt intensiver Forschungsarbeit. Sie versprechen Vorteile im Stromverbrauch, arbeiten bei niedrigerer Spannung und sind schneller. Die Herausgeber dieses Buches haben die bekanntesten Forscher auf dem Gebiet der Schaltkreise gewonnen, um jeweils ein Kapitel zu ihrem eigenen Spezialgebiet zu schreiben. Kompetent und hochaktuell! (01/00). Artikel-Nr. 9780471240679
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