Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability (Woodhead Publishing Series in Electronic and Optical Materials) - Softcover

Über die Autorin bzw. den Autor

Dr. Katsuaki Suganama graduated from Tohoku University Faculty of Engineering in 1977, and since then has had a highly influential role within the fields of Physical properties of metals/Metal-base materials, Inorganic industrial materials, Metal making/Resorce production engineering, Material processing/Microstructural control engineering, Structural/Functional materials, Composite materials/Surface and interface engineering, Inorganic materials/Physical properties, Electronic materials/Electric materials.

He has published several academic papers and books during his career, and has won many prestigious awards such as Best Paper of Symposium/Best Paper of Session in the 33rd International Symposium on Microelectronics and the Richard M. Fularth Pacific Award. He has worked as Professor at Osaka University Institute of Scientific and Industrial Research since 1996.

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Wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features such as high breakdown voltage, high frequency capability and high heat resistance beyond 200 C. These features provide us great energy loss reduction in electric conversion, module size reduction, and many other benefits. However, there are barriers to the use of WBG power semiconductors in the marketplace; the biggest being integration.

Ideal performance from SiC or GaN on Si cannot be achieved due to the current processes for system integration and packaging materials. Conventional materials and technologies cannot survive the increasing energy density which raises temperature beyond 200 C.

Wide bandgap Power Semiconductor Packaging addresses the key challenges that WBG power semiconductors face for integration including:

1) Thermal management such as heat resistance, heat dissipation and thermal stress

2) Noise reduction at high frequency and discrete components

3) Challenges in interfacing, metallization, plating, bonding, and wiring

Experts in the field present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.