silicon nitride (70 Ergebnisse)

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: Good. Volume 7. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings. In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,550grams, ISBN:0824713680.

Zustand: New. In.

Broschiert. Zustand: Gut. 159 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); Schnitt und Einband sind etwas staubschmutzig; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Text in ENGLISCHER Sprache! Sprache: Englisch Gewicht in Gramm: 300.

Zustand: New. In.

Zustand: Very Good. 178 pp., hardcover, minor library markings, else text clean and binding tight. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.

Zustand: Gebraucht / Used. 2008. Pap. iv,123pp. 8°. Diss./Thesis. Blibliogr.

Zustand: New. In.

Zustand: New. In.

Zustand: New. KlappentextThis report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i).

Zustand: New. KlappentextrnrnThis research demonstrates a method for producing highly conductive Si-implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive analysis of the resulting material s electrical and optical proper.

Paperback. Zustand: Brand New. 159 pages. 9.60x5.90x0.50 inches. In Stock.

Paperback. Zustand: Brand New. reprint edition. 124 pages. 11.02x8.27x0.29 inches. In Stock.

Zustand: New.

Paperback. Zustand: Brand New. 46 pages. 9.25x6.10x0.14 inches. In Stock.

Zustand: New.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon nitride is used for challening applications like cutting inserts or forming rolls. The extreme strength and toughness of the material is achieved by an interaction between the microstructure and fracture behaviour on the microlevel. In order to understand these mechanisms, detailed unit cells have been defined and used for the determination of the effective fracture properties. The results have been used for the implementation of an effective continuum damage mechanics model.

Taschenbuch. Zustand: Neu. Neuware - This research demonstrates a method for producing highly conductive Si-implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive analysis of the resulting material's electrical and optical properties as a function of Al mole fraction, anneal temperature, anneal time and implantation dose. Highly conductive alloys are critical to the fabrication of devices operative in deep UV, high-temperature, high-power, and high-frequency environments, and thus this research is significant in regard to the application of such devices. The AlxGa1-xN wafers of this study, with Al concentrations of 10 to 50%, were implanted at room temperature with silicon ions at energies of 200 keV with doses of 1x1014, 5x1014, and 1x1015 cm-2 and annealed from 1100 to 1350-C for 20 to 40 minutes in flowing nitrogen.

Taschenbuch. Zustand: Neu. Micromechanical finite element simulations of crack propagation in silicon nitride | Johannes Wippler | Taschenbuch | Kartoniert / Broschiert | Englisch | 2014 | Karlsruher Institut für Technologie | EAN 9783866448186 | Verantwortliche Person für die EU: Karlsruher Institut für Technologie (KIT), Institut AIFB, Kaiserstr. 89, 76133 Karlsruhe, verlag[at]aifb[dot]uni-karlsruhe[dot]de | Anbieter: preigu.

Zustand: Gebraucht / Used. 2008. Pap. 121pp. 8°. Diss./Thesis. Blibliogr.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The present book collects a broad overview of chemical and physical char acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.

Taschenbuch. Zustand: Neu. Synthesis of Silicon Carbide and Silicon Nitride using Biomass Husks | Synthesis of High-tech Ceramic Materials from Biomass Husks through Thermoanalytical Studies | Muhammad Ali | Taschenbuch | 60 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783659135118 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Understanding Laser Superheating in LAM of Silicon Nitride | Experiments on Fiber-Coupled Diode Laser Superheating in Laser-Assisted Machining of Silicon Nitride | Sriharsha Panuganti | Taschenbuch | 108 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838395005 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

paperback. Zustand: Good. Zustand des Schutzumschlags: No Dust Jacket. First Edition. Numerous figures and tables, creasing to spine, minor chipping to head and tail of spine and corners of soft cover, light bump to head of spine, minor soiling to page block, previous owner's name on half-title page, text clean and tight. Used.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - In this book, improvements in the heat resistance of silicon nitride (Si3N4) ceramics using grain boundary control and in plasticity at high temperatures using grain size control in order to reduce the cost of shaping Si3N4 are described. The heat resistance of Si3N4 is improved by mixing a slight amount of sintering additive as an impurity into the original material powder. The author presents his findings on the high heat resistance of Si3N4. The author also develops a new fabrication method for Si3N4 nano-ceramics that produces high plastic formability. The method developed offers two improved points in grinding and sintering processes. The author found that the plastic formability of Si3N4 nanoceramics is dependent on load stress; the results of his research are detailed in this book.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Taschenbuch. Zustand: Neu. Silicon Nitride for Microelectronic Applications | Part 2 Applications and Devices | J. T. Milek | Taschenbuch | vii | Englisch | 2013 | Springer | EAN 9781461596110 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . '' 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . -. . . . . . . . .