Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 99,79
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In den WarenkorbZustand: New. In.
Verlag: Springer New York, Springer New York, 2014
ISBN 10: 149390244X ISBN 13: 9781493902446
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 109,94
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
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In den WarenkorbZustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.
Verlag: Springer New York, Springer US Jul 2012, 2012
ISBN 10: 1461408172 ISBN 13: 9781461408178
Sprache: Englisch
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
EUR 149,79
Währung umrechnenAnzahl: 2 verfügbar
In den WarenkorbBuch. Zustand: Neu. Neuware -This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis;Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 180 pp. Englisch.
Verlag: Springer New York, Springer US, 2012
ISBN 10: 1461408172 ISBN 13: 9781461408178
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 152,32
Währung umrechnenAnzahl: 1 verfügbar
In den WarenkorbBuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Verlag: Springer-Verlag New York Inc., 2014
ISBN 10: 149390244X ISBN 13: 9781493902446
Sprache: Englisch
Anbieter: Kennys Bookstore, Olney, MD, USA
EUR 158,68
Währung umrechnenAnzahl: 15 verfügbar
In den WarenkorbZustand: New. This guide to Static Random Access Memory (SRAM) bitcell design and analysis meets the nano-regime challenges for CMOS devices and such emerging devices as Tunnel FETs. Offers popular SRAM bitcell topologies that mitigate variability, plus exhaustive analysis. Num Pages: 180 pages, 5 black & white tables, biography. BIC Classification: TDPB; TJF; TJFC. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 10. Weight in Grams: 285. . 2014. Paperback. . . . . Books ship from the US and Ireland.
Verlag: Springer-Verlag New York Inc., 2012
ISBN 10: 1461408172 ISBN 13: 9781461408178
Sprache: Englisch
Anbieter: Kennys Bookstore, Olney, MD, USA
EUR 230,52
Währung umrechnenAnzahl: 15 verfügbar
In den WarenkorbZustand: New. This guide to Static Random Access Memory (SRAM) bitcell design and analysis meets the nano-regime challenges for CMOS devices and such emerging devices as Tunnel FETs. Offers popular SRAM bitcell topologies that mitigate variability, plus exhaustive analysis. Num Pages: 168 pages, 5 black & white tables, biography. BIC Classification: TDPB; TJFC. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 11. Weight in Grams: 432. . 2012. 2012. Hardback. . . . . Books ship from the US and Ireland.