Random access memory (31 Ergebnisse)

Zustand: Good. Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc.

Zustand: New. pp. 92.

Soft cover. Zustand: As New. This book has been in storage since publication and is unread. Hence the description as new. Synopsis: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.…

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Paperback. Zustand: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

Paperback. Zustand: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

Paperback. Zustand: New. The item is brand new, never used or read. It's in perfect condition and may include supplements and/or access codes or come shrink-wrapped.

Paperback. Zustand: Brand New. 78 pages. 9.25x7.51x9.25 inches. In Stock.

Zustand: New. pp. 80.

Zustand: New. In English.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM's potential novel applications beyond the NVM applications.…

hardcover. Zustand: Very Good.

Taschenbuch. Zustand: Neu. Resistive Random Access Memory (RRAM) | Shimeng Yu | Taschenbuch | Synthesis Lectures on Emerging Engineering Technologies | vii | Englisch | 2016 | Springer | EAN 9783031009020 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Taschenbuch. Zustand: Neu. Resistive Random Access Memory | The New Generation High Speed Switching Non-Volatile Memory Device | Arnab Hazra | Taschenbuch | 96 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783848488322 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

Taschenbuch. Zustand: Neu. THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) | Semiconductor memory | Joseph Karanja | Taschenbuch | 92 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783844301472 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. …

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Taschenbuch. Zustand: Neu. Trends In Capacitorless Dynamic Random Access Memory | Yogesh Thakare | Taschenbuch | Englisch | 2023 | LAP LAMBERT Academic Publishing | EAN 9786206782445 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu. …

Taschenbuch. Zustand: Neu. Algorithms for Streaming Graphs | Approaching Graph Problems with Limited Memory and without Random Access | Mariano Zelke | Taschenbuch | 72 S. | Deutsch | 2015 | Südwestdeutscher Verlag für Hochschulschriften | EAN 9783838108063 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. …

Paperback. Zustand: Brand New. 184 pages. 9.00x6.00x0.46 inches. In Stock.

Zustand: New. In English.

Zustand: New. 250.

Paperback. Zustand: Brand New. 184 pages. 9.00x6.00x0.46 inches. In Stock.

Gebunden. Zustand: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switc.

Hardcover. Zustand: Brand New. 1st edition. 264 pages. 9.50x6.50x0.50 inches. In Stock.

Zustand: New.

Zustand: New.

Zustand: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Num Pages: 264 pages. BIC Classification: TJ; UKS. Category: (P) Professional & Vocational. Dimension: 242 x 158 x 18. Weight in Grams: 574. . 2016. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.…

Zustand: New. 2026. 1st Edition. hardcover. . . . . . Books ship from the US and Ireland.

Buch. Zustand: Neu. Neuware - Memory, the second function of a computer, has gradually become more complex in order to meet growing needs in terms of capacity, speed, security and energy efficiency. It takes the form of a component or system, such as a memory subassembly or a mass storage device. For several decades, there has been a strong trend towards integrating memory directly into the processor under the term embedded memory, of which cache memory is a typical example. Understanding its internal mechanisms and interfacing is essential for mastering the operation of a computer and programming it efficiently. Computer Memories 2 focuses on the static storage cell and its associated component, known as static random-access memory. The first part presents the main temporal characteristics of a generic random-access memory, as well as its electrical and mechanical properties, including aspects related to encapsulation. The second part focuses on the study of the first category of random-access semiconductor memory: asynchronous static memory, commonly referred to by the acronym SRAM (static random-access memory). The book details its temporal, electrical and mechanical characteristics, providing an in-depth understanding of its operation and technical specifications. …