Process device modeling (10 Ergebnisse)
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Process and Device Modeling for Integrated Circuit Design
Van De Wiele, F. (Editor)/ Engl, W. L. (Editor)/ Jespers, P. (Editor)
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - An Advanced Study Institute on process and device modeling for integrated circuit design was held in Louvain-la-Neuve. Belgium on July 19-29. 1977 under the auspices of the Scientific Affairs Division of NATO. The Institute was organized by a scienti…fic organizing committee consisting of Professor F. Van de Wiele of the Universite Catholique de Louvain. Professor W. L. Engl of the Technische Hochschule Aachen and Professor P. Jespers of the Universite Catholique de Louvain. This book represents the contributions of the lecturers at the Institute and the chapters present a concise treatment of a very timely subject. namely. process and device modeling for integrated circuit design. The organization of the book parallels the program at the Institute with an introd0ction comprised of a review of mo deling and basic semiconductor physics. This is followed by the chapters devoted to basic technologies. modeling of bipolar and MoS devices. The last chapter of the book presents the specific topic of process modeling. The subject matter of this book is suitable for a wide range of interests from the advanced student. through the practisihg physicist and engineer. to the research worker. Although a novice may find some difficulty with the mathematical development. he can acquire a perspective into the field of process and device modeling for integrated circuit design with this bDOk. Likewise. portions of this book may be used as a textbook since the chap ters are intructional and self-contained.
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Hardcover. Zustand: Good. No Jacket. Former library book; Missing dust jacket; Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less.
Weitere Bilder- Softcover
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Taschenbuch. Zustand: Neu. Recent Advances in PMOS Negative Bias Temperature Instability | Characterization and Modeling of Device Architecture, Material and Process Impact | Souvik Mahapatra | Taschenbuch | xxiii | Englisch | 2022 | Springer Singapore | EAN 9789811661228 | Verantwortliche Person für die EU: Springer Verlag GmbH…, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Sprache: Englisch
Verlag: Springer Nature Singapore, Springer Nature Singapore, 2021
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Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits…. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Sprache: Englisch
Verlag: Springer Nature Singapore, Springer Nature Singapore, 2022
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and c…ircuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
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Buch. Zustand: Neu. Neuware - Electric Circuit Simulation: Device and Process Modeling directly addresses the paramount importance of accurate and efficient simulation in modern electronic circuit design and verification. The relentless drive towards greater complexity and extreme miniaturization in integrated circuits (ICs) pre…sents formidable challenges in predicting behavior, optimizing performance, and ensuring reliability. Robust simulation methodologies are thus indispensable for continued technological advancement.This comprehensive text systematically lays out the foundational mathematical principles underpinning circuit analysis, encompassing essential topics like matrix algebra, linear systems, and vector calculus. It then thoroughly explores fundamental electric circuit principles, introduces advanced numerical methods for solving complex circuit equations, and provides detailed insights into modeling critical semiconductor devices such as MOSFETs and BJTs, capturing their nuanced electrical characteristics.Furthermore, the book extends its scope to microelectronics process modeling, elucidating various circuit simulation algorithms, including transient and AC analysis. It also delves into cutting-edge techniques for addressing reliability, managing variability, and optimizing designs for complex integrated systems. This makes it an invaluable resource for advanced undergraduate and graduate students, dedicated researchers, and practicing engineers across electrical engineering, microelectronics, and computational design fields.'.
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Paperback. Zustand: Brand New. 334 pages. 9.25x6.10x1.10 inches. In Stock.
