Anbieter: Romtrade Corp., STERLING HEIGHTS, MI, USA
Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Sprache: Englisch
Verlag: Nova Science Publishers, Incorporated, 2014
ISBN 10: 1633214990 ISBN 13: 9781633214996
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 153,57
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In den WarenkorbZustand: New. pp. 324.
Sprache: Englisch
Verlag: Nova Science Publishers, Inc, 2014
ISBN 10: 1633214990 ISBN 13: 9781633214996
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In den WarenkorbHRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.
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In den WarenkorbHardcover. Zustand: Brand New. uk ed. edition. 242 pages. 10.00x7.00x1.00 inches. In Stock.
Sprache: Englisch
Verlag: Nova Science Publishers Inc, 2014
ISBN 10: 1633214990 ISBN 13: 9781633214996
Anbieter: moluna, Greven, Deutschland
Zustand: New. KlappentextrnrnMOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreas.
Sprache: Englisch
Verlag: Nova Science Publishers Inc, 2014
ISBN 10: 1633214990 ISBN 13: 9781633214996
Anbieter: Kennys Bookstore, Olney, MD, USA
Zustand: New. Editor(s): Pergament, Alexander. Num Pages: 324 pages. BIC Classification: PN. Category: (P) Professional & Vocational. Dimension: 259 x 182 x 20. Weight in Grams: 650. . 2014. Hardcover. . . . . Books ship from the US and Ireland.
Sprache: Englisch
Verlag: Nova Science Publishers Inc Sep 2014, 2014
ISBN 10: 1633214990 ISBN 13: 9781633214996
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Neuware - MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) for a long time have been the workhorse of the modern electronics industry. For the purpose of a permanent integration enhancement, the size of a MOSFET has been decreasing exponentially for decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental (e.g. quantum-mechanical) limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are being currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one such promising approach which could enable and accelerate the development of information and computing technology. The behavior of d-electrons in transition metal oxides (TMOs) is responsible for the unique properties of these materials, causing strong electron-electron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the effect that researchers consider as one of the most promising phenomena for oxide electronics, particularly in its special direction known as a Mott-transition field-effect transistor (MTFET).
Sprache: Englisch
Verlag: NOVA SCIENCE PUBLISHERS INC (9/2014), 2014
ISBN 10: 1633214990 ISBN 13: 9781633214996
Anbieter: BOOKIT!, Genève, Schweiz
Zustand: Used: Like New. LIVRE A L?ETAT DE NEUF. EXPEDIE SOUS 3 JOURS OUVRES. NUMERO DE SUIVI COMMUNIQUE AVANT ENVOI, EMBALLAGE RENFORCE. EAN:9781633214996.