Optical electrical properties (98 Ergebnisse)

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Hardcover. Zustand: Very Good. No Dust Jacket. Corporate library stamps/labels/pocket, corner bumps, light wear. Solid copy. ; Contents: Preface; Conference Committees; Contents; Chapter 1 General methods and wave propagation (introduction and 10 papers); Ch 2 Electrons (intro + 27 papers); Ch 3 Photons (intro + 32 papers); Ch 4 Other material properties (intro + 35 papers); List of contributors; Analytic subject index. ; Ex-Library; 643 pages.…

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Zustand: Very Good. 1st edition. Cloth, dj, F/VG. viii+464pp, b/w text figs, index, a fine copy save for a faded spine to the dustjacket. Ex Libris B L Evans who wrote the first paper in the volume, 2 related ALS laid in ( from fellow physicists congratulating the author ). Publisher's series : Physics and Chemistry of Materials with Layered Structures Vol. 4. Contains eight papers : Optical Properties of Layer Compounds - Some Aspects of Modulation Spectroscopy in Layer Materials - The Optical Properties, Electronic Structure and Photoconductivity of Arsenic Chalcogenide Layer Crystals - Photoemission Studies of Materials with Layered Structures - Transport Properties of Layered Semiconductors - Transport Properties of Layered Structure Metals - Experimental Aspects of Superconductivity in Layered Structures - Structural and Magnetic Properties of Layered Chalcogenides of the Transition Elements. 1125 grams. …

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Hardcover. Zustand: Good. No Dust Jacket. 416 pages. Light shelf wear to the blue covers; pages toned; a sound binding; very good otherwise. Quantity Available: 1. Category: Science & Nature; ISBN: 0883181398. ISBN/EAN: 9780883181393. Inventory No: 236804.

Zustand: Gut. 1976 Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, kaum Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, few traces of use. Sprache: Englisch Gewicht in Gramm: 550.

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Taschenbuch. Zustand: Neu. Neuware - Bulk grown III-V ternary semiconductors of In0.08Ga0.92Sb and In0.15Ga0.85As were investigated through Hall-effect and photoluminescence measurements to determine carrier concentration, mobility, sheet resistivity, and luminescence spectrum. In the past, epitaxial layers of ternary compounds have been grown on binary compound substrates, and thus very limited lattice matched ternary alloys were available. Recently, bulk grown ternary substrates have been developed, and it has presented a renewed interest in using these substrates to grow high quality ternary compounds for use in many next generation optoelectronic devices. The results of photoluminescence (PL) study for the In0.15Ga0.85Sb sample show the exciton bound to neutral acceptor (Ao, X) transition peak at 0.675 eV along with a donor-shallow acceptor pair transitions at 0.650 eV, and the donor-deep acceptor pair transition peak at 0.628 eV.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant. …

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Zustand: New. KlappentextrnrnBulk grown III-V ternary semiconductors of In0.08Ga0.92Sb and In0.15Ga0.85As were investigated through Hall-effect and photoluminescence measurements to determine carrier concentration, mobility, sheet resistivity, and luminescenc.

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Hardcover. Zustand: Gut. 467 S. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, some traces of use. 902770676X Sprache: Englisch Gewicht in Gramm: 550.

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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Master's Thesis from the year 2004 in the subject Physics - Applied physics, Cairo University (National Institute of Laser Enhanced Sciences (NILES)), course: Laser Systems Department, language: English, abstract: The aim of the present work is how to make thin films using pulsed laser deposition (PLD) technique. This will include high vacuum system, target - substrate design and a suitable laser source.Also one of our main targets was to reach the optimum conditions by which the CdS thin film becomes more applicable in optoelectronic devices. This can be carried out by measuring the optical properties of CdS thin films and studying the spectral distribution of photocurrent response at different incident photon energies as well as the electrical properties.The optical and electrical properties of Cadmium Sulfide (CdS) thin film have attracted the attention of many authors due to their large field of applications. There is also a demand for further development of thin films for minimization of dimensions and weight of electronic systems.…

Academic Press, New York 1959. xiv, 416 pp. Publisher's cloth. Good conditin. (Methods of Experimental Physics 6).

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