Flash memories (36 Ergebnisse)

Paperback. Zustand: Very Good. No Jacket. May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less.

1st edition 2021. 21 cm x 14.8 cm, 218 g. XVI, 142 p. Softcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Schriftenreihe der Institute für Systemdynamik (ISD) und optische Systeme (IOS). Sprache: Englisch. …

Zustand: As New. Unread book in perfect condition.

Paperback. Zustand: Brand New. 158 pages. 8.26x5.82x0.34 inches. In Stock.

Paperback. Zustand: Brand New. 160 pages. 8.26x5.82x0.39 inches. In Stock.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Mohammed Rajab proposes different technologies like the error correction coding (ECC), sources coding and offset calibration that aim to improve the reliability of the NAND flash memory with low implementation costs for industrial application. The author examines different ECC schemes based on concatenated codes like generalized concatenated codes (GCC) which are applicable for NAND flash memories by using the hard and soft input decoding. Furthermore, different data compression schemes are examined in order to reduce the write amplification effect and also to improve the error correct capability of the ECC by combining both schemes.…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - In this work, algorithms and architectures for cryptography and source coding are developed, which are suitable for many resource-constrained embedded systems such as non-volatile flash memories. A new concept for elliptic curve cryptography is presented, which uses an arithmetic over Gaussian integers. Gaussian integers are a subset of the complex numbers with integers as real and imaginary parts. Ordinary modular arithmetic over Gaussian integers is computational expensive. To reduce the complexity, a new arithmetic based on the Montgomery reduction is presented. For the elliptic curve point multiplication, this arithmetic over Gaussian integers improves the computational efficiency, the resistance against side channel attacks, and reduces the memory requirements. Furthermore, an efficient variant of the Lempel-Ziv-Welch (LZW) algorithm for universal lossless data compression is investigated. Instead of one LZW dictionary, this algorithm applies several dictionaries to speed up the encoding process. Two dictionary partitioning techniques are introduced that improve the compression rate and reduce the memory size of this parallel dictionary LZW algorithm.…

Taschenbuch. Zustand: Neu. Channel and Source Coding for Non-Volatile Flash Memories | Mohammed Rajab | Taschenbuch | Schriftenreihe der Institute für Systemdynamik (ISD) und optische Systeme (IOS) | xvi | Englisch | 2020 | Springer Gabler | EAN 9783658289812 | Verantwortliche Person für die EU: Springer Vieweg in Springer Science + Business Media, Abraham-Lincoln-Str. 46, 65189 Wiesbaden, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Taschenbuch. Zustand: Neu. Algorithms and Architectures for Cryptography and Source Coding in Non-Volatile Flash Memories | Malek Safieh | Taschenbuch | Schriftenreihe der Institute für Systemdynamik (ISD) und optische Systeme (IOS) | xvi | Englisch | 2021 | Springer Gabler | EAN 9783658344580 | Verantwortliche Person für die EU: Springer Vieweg in Springer Science + Business Media, Abraham-Lincoln-Str. 46, 65189 Wiesbaden, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

Taschenbuch. Zustand: Neu. Low Power Embedded Systems | Intelligent Memory Management Systems for Low Power Embedded Systems- Caches, TLBs, Flash Memories | Jung-Hoon Lee | Taschenbuch | 128 S. | Englisch | 2014 | VDM Verlag Dr. Müller e.K. | EAN 9783639006094 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. …

Hardcover. Zustand: Gut. 268 S. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, some traces of use. 9789400760813 Sprache: Englisch Gewicht in Gramm: 550.

Taschenbuch. Zustand: Neu. Reliability Issues in Ultra-Scaled Flash Memories | Michele Ghidotti | Taschenbuch | Englisch | VDM Verlag Dr. Müller | EAN 9783639293616 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book.Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process.The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; Technical characteristics are translated into quantitative performance indicators; Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; Cost, density, performance and durability values are combined into a common factor - performance indicator - which fulfills the application requirements.…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book.Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process.The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; Technical characteristics are translated into quantitative performance indicators; Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; Cost, density, performance and durability values are combined into a common factor - performance indicator - which fulfills the application requirements.…

Zustand: As New. Unread book in perfect condition.

Hardcover. Zustand: Brand New. 2014 edition. 231 pages. 9.25x6.25x0.80 inches. In Stock.

Paperback. Zustand: Brand New. reprint edition. 292 pages. 9.30x6.20x0.70 inches. In Stock.

Taschenbuch. Zustand: Neu. 3D Flash Memories | Rino Micheloni | Taschenbuch | xxii | Englisch | 2018 | Springer | EAN 9789402413656 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology.After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird's-eye views and cross sections along the 3 axes.The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells Can 100 layers be integrated within the same piece of silicon Is 4 bit/cell possible with 3D Will 3D be reliable enough for enterprise and datacenter applications These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.…

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology.After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird's-eye views and cross sections along the 3 axes.The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells Can 100 layers be integrated within the same piece of silicon Is 4 bit/cell possible with 3D Will 3D be reliable enough for enterprise and datacenter applications These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.…

Zustand: New.

Zustand: New.

Paperback. Zustand: Brand New. reprint edition. 380 pages. 9.25x6.10x0.91 inches. In Stock.

Taschenbuch. Zustand: Neu. Inside NAND Flash Memories | Rino Micheloni (u. a.) | Taschenbuch | x | Englisch | 2014 | Springer | EAN 9789400798342 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Zustand: As New. Unread book in perfect condition.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media.To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera.), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console.The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs).SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses.Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.…

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media.To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera.), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console.The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs).SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses.Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.…

Zustand: New.

Gebunden. Zustand: New.

Paperback. Zustand: Brand New. reprint edition. 380 pages. 9.25x6.10x0.91 inches. In Stock.