Verlag: Berlin/Heidelberg, Springer., 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Sprache: Englisch
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In den Warenkorb24 cm. xviii, 126 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
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Verlag: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Sprache: Englisch
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In den WarenkorbZustand: New. Series: Springer Theses. Num Pages: 144 pages, 4 black & white illustrations, 80 colour illustrations, 55 colour tables, biography. BIC Classification: PNFS; TJFD5; TJFN; TTB. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 10. Weight in Grams: 385. . 2016. Hardback. . . . . Books ship from the US and Ireland.
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In den WarenkorbZustand: New. 2018. Paperback. . . . . . Books ship from the US and Ireland.
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In den WarenkorbHardcover. Zustand: Brand New. 146 pages. 9.50x6.25x0.75 inches. In Stock.
Verlag: Springer Berlin Heidelberg, Springer Berlin Heidelberg Feb 2016, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Sprache: Englisch
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
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In den WarenkorbBuch. Zustand: Neu. Neuware -A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 144 pp. Englisch.
Verlag: Springer Berlin Heidelberg, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
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In den WarenkorbBuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.
Verlag: Springer Berlin Heidelberg, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Sprache: Englisch
Anbieter: Buchpark, Trebbin, Deutschland
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In den WarenkorbZustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.
Verlag: Springer, Berlin, Springer Berlin Heidelberg, Springer, 2018
ISBN 10: 3662569485 ISBN 13: 9783662569481
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.