Epitaxy (228 Ergebnisse)

Hardcover. Zustand: Very Good. [Chemical Beam Epitaxy and Related Techniques] (By: J.S. Foord) [published: December, 1997] This book is in very good condition and will be shipped within 24 hours of ordering. The cover may have some limited signs of wear but the pages are clean, intact and the spine remains undamaged. This book has clearly been well maintained and looked after thus far. Money back guarantee if you are not satisfied. See all our books here, order more than 1 book and get discounted shipping. .…

Hardcover. Zustand: Fair. No Jacket. Readable copy. Pages may have considerable notes/highlighting. ~ ThriftBooks: Read More, Spend Less.

Hardcover. Zustand: Very Good. Shipped within 24 hours from our UK warehouse. Clean, undamaged book with no damage to pages and minimal wear to the cover. Spine still tight, in very good condition. Remember if you are not happy, you are covered by our 100% money back guarantee.

4°, Broschur. Zustand: Gut. 371 Seiten Ausgetragenes Bibliotheksexemplar, Buch ist in einem guten Zustand, Einband lichtrandig/berieben, Oberes Kapital angerissen, Ecken berieben, Papier in altersgemäßem sehr gutem Zustand. MIG-20-06B Sprache: Englisch Gewicht in Gramm: 1050.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

gebundene Ausgabe. Zustand: Gut. 251 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); leichte altersbedingte Anbräunung des Papiers; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. In ENGLISCHER Sprache. Sprache: Englisch Gewicht in Gramm: 620.…

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Mit zahlr. Abb. und Tabellen. 251 S., 2 Bl. Titelrückseite gestempelt und hinterer Spiegel mit Reste eines Klebezettels, insgesamt gutes, sauberes Exemplar. Sprache: Englisch Gewicht in Gramm: 550 OLwd. mit OU (kl. Klebezettel am unteren Kapital).

Zustand: New. In.

Zustand: Good. Volume 7. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings. In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,800grams, ISBN:3540190759.…

gebundene Ausgabe. Zustand: Gut. 382 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); Schnitt und Einband sind etwas staubschmutzig; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Text in ENGLISCHER Sprache! Sprache: Englisch Gewicht in Gramm: 720.…

Paperback. Zustand: Very Good. 1. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. In.

Zustand: New. In.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. In.

Paperback. Zustand: Brand New. 180 pages. 10.25x7.25x0.41 inches. In Stock.

Hardcover. Zustand: Good. No Jacket. Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less.

Zustand: Very Good. 2 volumes, 1086 pp., hardcover, previous owner's name to front free endpapers else a very good set. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.…

Hardcover. Zustand: Gut. xiv, 428 S. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library in GOOD condition with library-signature and stamp(s). Some traces of use. R-16629 354056540X Sprache: Englisch Gewicht in Gramm: 550.

Zustand: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.…

Zustand: New.

Zustand: Fair. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings. In fair condition, suitable as a study copy. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,800grams, ISBN:0126738408.…

Taschenbuch. Zustand: Neu. Neuware - Aluminum gallium nitride (AlGaN)-based devices are attractive candidates for integration into future Air Force communication and sensor platforms, including those that must operate in harsh radiation environments. In this study, the electrical and optical properties of 1.0 MeV electron irradiated n-AlxGa1-xN are characterized for aluminum mole fraction x = 0.0 to 0.3 using deep level transient spectroscopy (DLTS), temperature-dependent Hall, and cathodoluminescence (CL) measurements. Following irradiation of the AlGaN, it is found that four different electron traps are created, having energy levels within 0.4 eV below the conduction band edge. Three of these traps correspond to radiation-induced traps previously reported in GaN, and they are found to deepen significantly in the energy band gap with increase in aluminum mole fraction. The room temperature carrier concentration decreases following irradiation, and the carrier removal rate is found to depend foremost on the initial carrier concentration, regardless of the aluminum mole fraction. Also, following 1.0 MeV electron irradiation at a fluence of 1x1017 cm-2, the peak CL intensities of the samples are reduced, on average, by 50%. In spite of these findings, it is concluded that n-AlxGa1-xN is intrinsically more tolerant to radiation than conventional semiconductor materials such as GaAs and Si.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.…

Zustand: New. In.

Zustand: Fair. Volume 3. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings. In fair condition, suitable as a study copy. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,2100grams, ISBN.…

Zustand: New. 2014. paperback. . . . . . Books ship from the US and Ireland.

Zustand: Bueno. : Introducción a la epitaxia proporciona la información esencial para un curso de posgrado de nivel superior que trata sobre el crecimiento cristalino de heteroestructuras de semiconductores. La heteroepitaxia representa la base de los dispositivos electrónicos y optoelectrónicos avanzados de hoy en día y se considera uno de los principales campos en la investigación de materiales. El libro cubre las propiedades estructurales y electrónicas de las capas epitaxiales tensadas, la termodinámica y la cinética del crecimiento de capas, y la descripción de las principales técnicas de crecimiento: epitaxia en fase de vapor metalorgánica, epitaxia de haz molecular y epitaxia en fase líquida. Se tratan en detalle los semiconductores cúbicos, la relajación de la tensión por dislocaciones de desajuste, los efectos de la tensión y el confinamiento en los estados electrónicos, las estructuras superficiales y los procesos durante la nucleación y el crecimiento. La Introducción a la epitaxia requiere poco conocimiento de la física del estado sólido. Los estudiantes de ciencias naturales, ciencia de los materiales e ingeniería eléctrica, así como sus profesores, se benefician de las introducciones elementales a la teoría y la práctica del crecimiento epitaxial, apoyadas por referencias pertinentes y más de 200 ilustraciones detalladas. EAN: 9783642329692 Tipo: Libros Categoría: Tecnología|Ciencias Título: Epitaxy of Semiconductors Autor: Udo W. Pohl Idioma: en Páginas: 325 Formato: tapa dura.…

Zustand: New. In.