Zustand: Muy bueno. : Este libro presenta un modelo SPICE avanzado para HEMT de GaN, un nuevo estándar industrial para el diseño de circuitos de potencia y RF. Publicado por Springer International Publishing AG en 2022, cuenta con 188 páginas y está escrito en inglés. El autor principal es Sourabh Khandelwal. EAN: 9783030777326 Tipo: Libros Categoría: Tecnología Título: Advanced SPICE Model for GaN HEMTs Autor: Sourabh Khandelwal Idioma: en Páginas: 188.
Verlag: Springer Nature Switzerland, 2022
ISBN 10: 3030777324 ISBN 13: 9783030777326
Sprache: Englisch
Anbieter: preigu, Osnabrück, Deutschland
Taschenbuch. Zustand: Neu. Advanced SPICE Model for GaN HEMTs (ASM-HEMT) | A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design | Sourabh Khandelwal | Taschenbuch | xv | Englisch | 2022 | Springer Nature Switzerland | EAN 9783030777326 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Verlag: Springer International Publishing, 2022
ISBN 10: 3030777324 ISBN 13: 9783030777326
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.
Verlag: Springer International Publishing, 2022
ISBN 10: 3030777324 ISBN 13: 9783030777326
Sprache: Englisch
Anbieter: Buchpark, Trebbin, Deutschland
Zustand: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher.
Verlag: Springer International Publishing, 2022
ISBN 10: 3030777324 ISBN 13: 9783030777326
Sprache: Englisch
Anbieter: Buchpark, Trebbin, Deutschland
Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.
Verlag: Springer International Publishing, 2021
ISBN 10: 3030777294 ISBN 13: 9783030777296
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.