Sprache: Englisch
Verlag: World Scientific Publishing Company, 1998
ISBN 10: 9971501422 ISBN 13: 9789971501426
Anbieter: ThriftBooks-Dallas, Dallas, TX, USA
Hardcover. Zustand: Very Good. No Jacket. May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 93,61
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 123,50
Anzahl: 2 verfügbar
In den WarenkorbPaperback. Zustand: Brand New. 238 pages. 9.00x6.50x0.75 inches. In Stock.
Sprache: Englisch
Verlag: WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 9971501422 ISBN 13: 9789971501426
Anbieter: Buchpark, Trebbin, Deutschland
Zustand: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.