Sprache: Englisch
Verlag: Jenny Stanford Publishing, 2017
ISBN 10: 9814745510 ISBN 13: 9789814745512
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 140,39
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
Sprache: Englisch
Verlag: Jenny Stanford Publishing, 2017
ISBN 10: 9814745510 ISBN 13: 9789814745512
Anbieter: moluna, Greven, Deutschland
EUR 151,54
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. Chinmay K. Maiti received his B.Sc. (Hons.) in physics (1969), B.Tech. in applied physics (1972), and M.Tech. in radio physics and electronics (1974) from the University of Calcutta, India. He then did his M.Sc. (Res.) in microelectronic.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 220,00
Anzahl: 2 verfügbar
In den WarenkorbHardcover. Zustand: Brand New. 1st edition. 421 pages. 9.00x6.00x1.25 inches. In Stock.
Sprache: Englisch
Verlag: Jenny Stanford Publishing Mär 2017, 2017
ISBN 10: 9814745510 ISBN 13: 9789814745512
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Neuware - This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today's advanced technology era, process compact modeling and DFM issues have been included for design-technology interface generation.