ISBN: 9789814241083 - nanometer cmos (10 Ergebnisse)

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: Fair. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In fair condition, suitable as a study copy. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,700grams, ISBN:9789814241083.…

Zustand: NEW.

Zustand: New. In English.

Hardcover. Zustand: Brand New. 1st edition. 340 pages. 9.00x6.20x0.80 inches. In Stock.

Gebunden. Zustand: New. Juin J Liou, Frank Schwierz, Hei WongThis book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorou.

Zustand: New. Provides a comprehensive overview of all the important issues concerning modern Si MOSFETs, including the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs and non-classical MOSFET concepts are treated in detail. Num Pages: 340 pages, 171 black & white illustrations. BIC Classification: TBN. Category: (G) General (US: Trade); (UP) Postgraduate, Research & Scholarly. Dimension: 236 x 156 x 19. Weight in Grams: 640. . 2010. 1st Edition. hardcover. . . . . Books ship from the US and Ireland.…

Buch. Zustand: Neu. Nanometer CMOS | Frank Schwierz (u. a.) | Buch | Einband - fest (Hardcover) | Englisch | 2010 | Pan Stanford Publishing Pte Ltd | EAN 9789814241083 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu.

Buch. Zustand: Neu. Neuware - This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology. …