9789811065491 - analytical modelling of breakdown effect in graphene nanoribbon field effect transistor (springerbriefs in applied sciences and technology) von amiri, iraj sadegh (4 Ergebnisse)

- Softcover
Anbieter: moluna, Greven, Deutschlandmoluna
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 48,37
EUR 48,99 VersandVersand von Deutschland nach USAAnzahl: Mehr als 20 verfügbar
Zustand: New.

- Softcover
Anbieter: Revaluation Books, Exeter, Vereinigtes KönigreichRevaluation Books
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 90,99
EUR 11,69 VersandVersand von Vereinigtes Königreich nach USAAnzahl: 1 verfügbar
Paperback. Zustand: Brand New. 86 pages. 9.00x6.00x0.50 inches. In Stock.

- Softcover
Anbieter: AHA-BUCH GmbH, Einbeck, DeutschlandAHA-BUCH GmbH
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 58,39
EUR 60,90 VersandVersand von Deutschland nach USAAnzahl: 1 verfügbar
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coeffic…ient ( ), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss's law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this,simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

- Softcover
Anbieter: preigu, Osnabrück, Deutschlandpreigu
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 50,40
EUR 70,00 VersandVersand von Deutschland nach USAAnzahl: 5 verfügbar
Taschenbuch. Zustand: Neu. Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor | Iraj Sadegh Amiri (u. a.) | Taschenbuch | SpringerBriefs in Applied Sciences and Technology | ix | Englisch | 2017 | Springer | EAN 9789811065491 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergart…enstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.