ISBN: 9783540714903 - advanced gate stacks for high-mobility semiconductors (springer series in advanced microelectronics, 27, band 27) (4 Ergebnisse)

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Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Strained-Si CMOS Technology.- High Current Drivability MOSFET Fabricated on Si(110) Surface.- Advanced High-Mobility Semiconductor-on-Insulator Materials.- Passivation and Characterization of Germanium Surfaces.- Interface Engineering for High- Ge MOSFETs.- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High- /Metal Gate Metal-Oxide-Semiconductor Devices.- Modeling of Growth of High- Oxides on Semiconductors.- Physical, Chemical, and Electrical Characterization of High- Dielectrics on Ge and GaAs.- Point Defects in Stacks of High- Metal Oxides on Ge: Contrast with the Si Case.- High Gate Dielectrics for Compound Semiconductors.- Interface Properties of High- Dielectrics on Germanium.- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High- Materials and Films.- Germanium Nanodevices and Technology.- Opportunities and Challenges of Germanium Channel MOSFETs.- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates.- Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics.- Fabrication of MBE High- MOSFETs in a Standard CMOS Flow.…

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 408 | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.…