Isbn: 9783527353187 - hfo2-based ferroelectric materials: fabrication, characterization and device applications (4 Ergebnisse)

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  • Sprache: Englisch

    Verlag: Wiley-VCH, 2026

    3527353186 / 9783527353187

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  • Sprache: Englisch

    Verlag: Wiley-VCH GmbH, 2026

    3527353186 / 9783527353187

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    Buch. Zustand: Neu. HfO2-Based Ferroelectric Materials | Fabrication, Characterization and Device Applications | Xubing Lu | Buch | 480 S. | Englisch | 2026 | Wiley-VCH | EAN 9783527353187 | Verantwortliche Person für die EU: Wiley-VCH GmbH, Boschstr. 12, 69469 Weinheim, product-safety[at]wiley[dot]com | Anbieter: preigu. …

  • Sprache: Englisch

    Verlag: Wiley-VCH Sep 2026, 2026

    3527353186 / 9783527353187

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    Buch. Zustand: Neu. Neuware - Explores HfO2-based ferroelectrics for memory, sensing, and advanced electronic applicationsFerroelectric hafnium oxide (HfO2)-based materials have transformed the field of electronic materials and device design, offering pathways to overcome long-standing barriers in scalability, compatibility, and reliability. The emergence of robust ferroelectricity in doped HfO2 has revolutionized both research and industry perspectives, providing a viable solution where conventional ferroelectrics often fell short.With contributions from leading experts, HfO2-Based Ferroelectric Materials addresses the critical need for a consolidated reference on HfO2-based ferroelectrics, offering foundational knowledge as well as the latest insights into fabrication, material characterization, and device integration. The book opens with fundamentals of ferroelectricity and the mechanisms driving HfO2-based ferroelectric behavior, before progressing to detailed examinations of deposition techniques, superlattice structures, and reliability considerations. It further explores a broad spectrum of applications, including non-volatile memories, neuromorphic computing, compute-in-memory architectures, and negative capacitance transistors, alongside emerging roles in energy storage, microwave technologies, and piezoelectric systems. Special attention is given to persistent challenges such as the wake-up effect, fatigue, and imprint issues and the strategies developed to mitigate them.An authoritative and well-structured resource for advancing the frontiers of electronic materials and device technologies, HfO2-Based Ferroelectric Materials:\* Explains the origins of ferroelectricity in doped HfO2 and its unique material advantages\* Details deposition techniques and approaches to regulating ferroelectric behavior\* Examines device-level challenges, including wake-up effect, fatigue, and imprint reliability\* Highlights applications spanning non-volatile memories, neuromorphic computing, and energy-efficient devices\* Discusses advanced designs such as superlattice-like laminate structures and 3D ferroelectric memories\* Provides insight into the reliability of HfO2-based thin films, capacitors, and field-effect transistorsHfO2-Based Ferroelectric Materials: Fabrication, Characterization, and Device Applications is an essential resource for materials scientists, electronics engineers, semiconductor and solid-state physicists, and professionals in the semiconductor and sensor industries. It is also a valuable reference for graduate-level courses in electronic materials, semiconductor devices, and advanced nanotechnology within physics, materials science, and electrical engineering degree programs.…